SCHEMBL8737653

SCHEMBL8737653

CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)F

nearest known ligand 0.37

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
RECQL P46063 1/20 0.37
TSHR P16473 2/20 0.36
USP2 O75604 1/20 0.36
MAPT P10636 1/20 0.36
GAA P10253 1/20 0.33
KDM4E B2RXH2 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25685792 1.00 CYP1A2 (0.37) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL25808510 1.00 CYP1A2 (0.37) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL25685794 1.00 CYP1A2 (0.37) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL8737651 1.00 CYP1A2 (0.37) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL1826303 0.97 CYP1A2 (0.35) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL681583 0.90 CYP1A2 (0.34) CYP1A2CYP2C19TSHRGAAKDM4E
SCHEMBL13613264 0.81 CYP1A2 (0.36) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL13613268 0.81 CYP1A2 (0.36) CYP1A2CYP2C9CYP2C19RECQLTSHR
SCHEMBL13013080 0.81 TSHR (0.31) TSHRTDP1
SCHEMBL13013077 0.81 TSHR (0.31) TSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023123746-A1 FLEXIBLE PACKAGING AGENT FOR SEMICONDUCTOR ELEMENT AND PREPARATION METHOD THEREFOR, AND THIN FILM PACKAGING METHOD 深圳市首骋新材料科技有限公司 2023-07-06 WO disclosed
US-9233919-B2 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-12 US disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-20140296561-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD SHINETSU CHEMICAL CO (JP) 2014-10-02 US disclosed
US-8785105-B2 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-22 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-8394570-B2 Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-12 US disclosed
US-8283104-B2 Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-09 US disclosed
US-20120129103-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-24 US disclosed
US-8105748-B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-04 US disclosed
US-7670751-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-02 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
US-20090233223-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
US-20090233242-A1 LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20080026331-A1 Lactone-containing compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 CYP1A2 799/4885CYP2C9 827/4885CYP2C19 820/4885
US-20140296561-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD RER1, SMC4, SMCHD1 CYP1A2 4475/4885CYP2C9 4177/4885CYP2C19 4118/4885
US-20090233242-A1 LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS WDR5, RER1, H1-5 CYP1A2 2348/4885CYP2C9 2436/4885CYP2C19 2097/4885
US-20100055608-A1 POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ARSA, ACSL3, RAD54L CYP1A2 2528/4885CYP2C9 2709/4885CYP2C19 3199/4885
US-20120129103-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD RER1, SMC4, SMCHD1 CYP1A2 4475/4885CYP2C9 4177/4885CYP2C19 4118/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.