Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTRB1 | P17538 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | DGAT1 | O75907 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL892136 | 0.87 | CTRB1 (0.31) | CTRB1 | |
| SCHEMBL12869242 | 0.79 | CTRB1 (0.37) | CTRB1SMN1; SMN2ALDH1A1DGAT1 | |
| SCHEMBL21375478 | 0.78 | CTRB1 (0.39) | CTRB1SMN1; SMN2ALDH1A1DGAT1 | |
| SCHEMBL11216608 | 0.78 | CTRB1 (0.39) | CTRB1SMN1; SMN2ALDH1A1DGAT1 | |
| SCHEMBL765780 | 0.78 | DGAT1 (0.41) | CTRB1SMN1; SMN2ALDH1A1DGAT1 | |
| SCHEMBL17898134 | 0.77 | MMP8 (0.40) | ALDH1A1 | |
| SCHEMBL10601712 | 0.76 | CTRB1 (0.38) | CTRB1ALDH1A1DGAT1 | |
| SCHEMBL12869260 | 0.76 | CTRB1 (0.35) | CTRB1SMN1; SMN2ALDH1A1DGAT1 | |
| SCHEMBL17067292 | 0.75 | CTRB1 (0.40) | CTRB1SMN1; SMN2ALDH1A1DGAT1 | |
| SCHEMBL12886375 | 0.74 | CTRB1 (0.37) | CTRB1SMN1; SMN2ALDH1A1DGAT1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9500949-B2 | Chemically-amplified positive resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9500949-B2 | Chemically-amplified positive resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9500949-B2 | Chemically-amplified positive resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9436083-B2 | Chemically-amplified negative resist composition and resist patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9261783-B2 | Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-16 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-8697903-B2 | Fluorinated ester monomer, making method, fluorinated ester polymer, and difluorohydroxycarboxylic acid | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-15 | — | — | US | disclosed |
| US-20140051024-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-20 | — | — | US | disclosed |
| US-20140051024-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-20 | — | — | US | disclosed |
| US-20140051024-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-20 | — | — | US | disclosed |
| US-20120083580-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120083580-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120083580-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-04-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | CA2, CASR, CECR2 | CTRB1 2722/4885SMN1; SMN2 1267/4885ALDH1A1 4260/4885 |
| US-20120083580-A1 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID | ARF1, FFAR3, RFC3 | CTRB1 1692/4885SMN1; SMN2 3516/4885ALDH1A1 1164/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.