SCHEMBL910070

SCHEMBL910070

NC1(C(=O)OCc2c([N+](=O)[O-])cccc2[N+](=O)[O-])CCCCC1

nearest known ligand 0.39

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
GPR35 Q9HC97 2/20 0.39
LMNA P02545 3/20 0.39
CTDSP1 Q9GZU7 1/20 0.38
L3MBTL1 Q9Y468 2/20 0.35
CTSD P07339 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
KMT2A Q03164 1/20 0.35
ALDH1A1 P00352 4/20 0.35
KDM4E B2RXH2 3/20 0.35
MAPT P10636 3/20 0.35
MAPK1 P28482 2/20 0.35
PKM P14618 1/20 0.35
BACE1 P56817 1/20 0.34
MAOB P27338 1/20 0.34
POLB P06746 1/20 0.34
HTT P42858 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
CACNA1C Q13936 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2202794 0.86 GPR35 (0.39) GPR35LMNATDP1KMT2AALDH1A1
SCHEMBL1055257 0.86 MAOB (0.47) LMNACTDSP1L3MBTL1KMT2AALDH1A1
SCHEMBL8859262 0.80 KMT2A (0.39) LMNACTDSP1L3MBTL1CTSDKMT2A
SCHEMBL2199933 0.80 RXRA (0.37) ALDH1A1MAPTBACE1SMN1; SMN2
SCHEMBL2200275 0.78 CYP1A2 (0.48) GPR35LMNATDP1KMT2AALDH1A1
SCHEMBL2199007 0.77 HTR2A (0.49) MAOBHTT
SCHEMBL8859379 0.74 ALDH1A1 (0.38) GPR35LMNACTDSP1L3MBTL1TDP1
SCHEMBL9435963 0.74 RAB9A (0.47) LMNAL3MBTL1CTSDTDP1KMT2A
SCHEMBL1058181 0.73 GPR174 (0.47) LMNAKMT2AALDH1A1KDM4EMAPT
SCHEMBL28842569 0.73 MAOB (0.39) KDM4EMAPTMAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 175 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8367190-B2 At low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same LG CHEM, LTD. (KR) 2013-02-05 US claimed
US-20100078598-A1 CONDUCTIVE POLYMER COMPOSITION FOR RADIOGRAPHIC IMAGING ELPANI CO., LTD. (KR) 2010-04-01 US claimed
US-20100080973-A1 LOW TEMPERATURE, FAST HARDENING COMPOSITION FOR PREPARING PROTECTING FILM, PROTECTING FILM PREPARED THEREFROM, AND SUBSTRATE COMPRISING THE SAME LG CHEM, LTD. (KR) 2010-04-01 US claimed
US-6703190-B2 Method for producing resist structures INFINEON TECHNOLOGIES AG (DE) 2004-03-09 US claimed
US-20030008240-A1 Method for producing resist structures POLARIS INNOVATIONS LIMITED (IE) 2003-01-09 US claimed
US-12607931-B2 Photosensitive transfer material, light shielding material, LED array, and electronic apparatus FUJIFILM CORPORATION (JP) 2026-04-21 US disclosed
US-12479960-B2 Triazine ring-containing polymer and film forming composition containing same NISSAN CHEMICAL CORPORATION (JP) 2025-11-25 US disclosed
US-12426166-B2 Method of manufacturing conductive pattern, touch sensor, electromagnetic wave shield, antenna, wiring board, conductive heating element, and structure FUJIFILM CORPORATION (JP) 2025-09-23 US disclosed
WO-2025013746-A1 PATTERN-FORMING COMPOSITION 日産化学株式会社 2025-01-16 WO disclosed
US-20240049386-A1 LAMINATE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-02-08 US disclosed
WO-2024024864-A1 PHOTOSENSITIVE TRANSFER MATERIAL, METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING RESIN PATTERN, AND METHOD FOR MANUFACTURING CIRCUIT WIRING 富士フイルム株式会社 2024-02-01 WO disclosed
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
US-20030139486-A1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORPORATION (JP) 2003-07-24 US disclosed
EP-1323742-A2 Radiation sensitive refractive index changing composition and refractive index changing method JSR Corporation (JP) 2003-07-02 EP disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
US-20030008240-A1 Method for producing resist structures POLARIS INNOVATIONS LIMITED (IE) 2003-01-09 US disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed
EP-0633502-B1 PATTERN FORMING MATERIAL CLARIANT FINANCE BVI LTD (VG) 2002-03-20 EP disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed
EP-0633502-A1 PATTERN FORMING MATERIAL HOECHST JAPAN LIMITED (JP) 1995-01-11 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12607931-B2 Photosensitive transfer material, light shielding material, LED array, and electronic apparatus SETD1B, NLRP1, MAP1LC3B GPR35 4323/4885LMNA 2929/4885CTDSP1 4493/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.