SCHEMBL917513

SCHEMBL917513

[Ge+4].[Na+].[Na+].[O-2].[O-2].[O-2]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16583910 1.00
Zinc Ion SCHEMBL917190 0.87
Water SCHEMBL16894681 0.87
SCHEMBL916966 0.87
SCHEMBL3124814 0.87
SCHEMBL7544515 0.82
SCHEMBL5016237 0.82
SCHEMBL1759642 0.82
SCHEMBL7545738 0.82
SCHEMBL29159 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117758395-A Nanoscale germanium-doped tin dioxide gas-sensitive material, preparation method and application thereof in high-sensitivity hydrogen detection 吉林大学 2024-03-26 CN claimed
EP-3013747-B1 METHOD FOR PREPARING A COMPOSITION COMPRISING FUNCTIONALISED MINERAL PARTICLES AND CORRESPONDING COMPOSITION CENTRE NAT RECH SCIENT (FR) 2024-01-24 EP claimed
CN-117106345-A Sand-in-water multicolor paint and preparation method and application thereof 广州立邦涂料有限公司 2023-11-24 CN claimed
CN-116283898-A Method for preparing 3-methyl sulfolane 万华化学集团股份有限公司 2023-06-23 CN claimed
CN-115980140-A Cadmium germanate/cadmium oxide gas-sensitive material with high sensitivity to carbon monoxide, preparation method and application thereof 吉林大学 2023-04-18 CN claimed
US-11618827-B2 Method for preparing a composition comprising functionalised mineral particles and corresponding composition CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) (FR) 2023-04-04 US claimed
US-11485955-B2 Formula of serum-free medium for human pluripotent stem cells Yang, Tao (CN) 2022-11-01 US claimed
US-20220220316-A1 METHOD FOR PREPARING A COMPOSITION COMPRISING FUNCTIONALISED MINERAL PARTICLES AND CORRESPONDING COMPOSITION UNIVERSITE PAUL SABATIER TOULOUSE III (FR) 2022-07-14 US claimed
CN-113358710-B Olivine structure gas sensitive material for detecting formaldehyde and preparation method thereof 吉林大学 2022-06-28 CN claimed
US-11352264-B2 Method for preparing synthetic mineral particles CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (FR) 2022-06-07 US claimed
CN-102569025-A Epitaxial substrate, semiconductor light emitting element using the same and manufacturing process KUNSHAN SINO SILICON TECHNOLOGY CO LTD 2012-07-11 CN claimed
US-7863164-B2 Method of growing GaN using CVD and HVPE Natioal Sun Yat-Sen University (TW) 2011-01-04 US claimed
US-20100248461-A1 Method of growing GaN using CVD and HVPE NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2010-09-30 US claimed
US-20080233415-A1 Structure of LiAlO2 substrate having ZnO buffer layer NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2008-09-25 US claimed
US-20080233671-A1 Method of fabricating GaN LED NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2008-09-25 US claimed
US-20080231172-A1 Light emitting device using phosphor powder NATIONAL SUN YAT-SEN UNIVERSITY (TW) 2008-09-25 US claimed
CN-1105401-C Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIV OF CENTRAL FLORIDA (US) 2003-04-09 CN claimed
CN-1159251-A Modified wurtzite structrue oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIV OF CENTRAL FLORIDA (US) 1997-09-10 CN claimed
US-5625202-A Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth UNIVERSITY OF CENTRAL FLORIDA (US) 1997-04-29 US claimed
WO-1996042114-A1 MODIFIED WURTZITE STRUCTURE OXIDE COMPOUNDS AS SUBSTRATES FOR III-V NITRIDE COMPOUND SEMICONDUCTOR EPITAXIAL THIN FILM GROWTH UNIVERSITY OF CENTRAL FLORIDA (US) 1996-12-27 WO claimed