Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.43 |
| ▸ | LMNA | P02545 | 1/20 | 0.43 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.43 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.36 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.36 |
| ▸ | CHRM3 | P20309 | 2/20 | 0.36 |
| ▸ | GAA | P10253 | 2/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | PGR | P06401 | 1/20 | 0.36 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.36 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.36 |
| ▸ | HTR1A | P08908 | 1/20 | 0.36 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.36 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.36 |
| ▸ | CHRNB4 | P30926 | 1/20 | 0.36 |
| ▸ | CHRNA3 | P32297 | 1/20 | 0.36 |
| ▸ | CHRNA7 | P36544 | 1/20 | 0.36 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
| ▸ | CHRNA10 | Q9GZZ6 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11965872 | 0.78 | ALDH1A1 (0.44) | ALDH1A1LMNAHSD17B10CHRM5CHRM1 | |
| SCHEMBL5005564 | 0.78 | TSHR (0.48) | ALDH1A1TSHRMAPK1TDP1 | |
| Acetic Acid SCHEMBL27286133 | 0.77 | ALDH1A1 (0.53) | ALDH1A1LMNAHSD17B10CHRM5CHRM1 | |
| Acetic Acid SCHEMBL29011975 | 0.77 | ALDH1A1 (0.53) | ALDH1A1LMNAHSD17B10CHRM5CHRM1 | |
| Acetic Acid SCHEMBL28767597 | 0.77 | ALDH1A1 (0.53) | ALDH1A1LMNAHSD17B10CHRM5CHRM1 | |
| SCHEMBL18009810 | 0.77 | ALOX15 (0.46) | LMNAHSD17B10CHRM5CHRM1CHRM3 | |
| SCHEMBL1476342 | 0.77 | ALDH1A1 (0.50) | ALDH1A1LMNAHSD17B10CHRM5CHRM1 | |
| SCHEMBL13685840 | 0.77 | BTN3A1 (0.41) | ALDH1A1GAARAB9AMAPK1TDP1 | |
| SCHEMBL28043810 | 0.77 | NAAA (0.41) | ALDH1A1LMNAHSD17B10GAAMAPK1 | |
| SCHEMBL9463531 | 0.77 | MAPK1 (0.39) | ALDH1A1LMNAHSD17B10MAPK1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240240217-A1 | NUCLEOSIDES AND NUCLEOTIDES WITH 3' BLOCKING GROUPS AND CLEAVABLE LINKERS | ILLUMINA, INC. | 2024-07-18 | — | — | US | disclosed |
| US-9428485-B2 | Salt, photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-30 | — | — | US | disclosed |
| US-9188857-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20130252181-A1 | RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON | MITSUBISHI RAYON CO., LTD. (JP) | 2013-09-26 | — | — | US | disclosed |
| US-8476401-B2 | Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2013-07-02 | — | — | US | disclosed |
| US-20120315580-A1 | SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-12-13 | — | — | US | disclosed |
| US-8241829-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8241829-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2012-08-14 | — | — | US | disclosed |
| US-8049042-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8049042-B2 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-7838602-B2 | Weatherable, thermostable polymers having improved flow composition | SABIC INNOVATIVE PLASTICS IP B.V. (NL) | 2010-11-23 | — | — | US | disclosed |
| US-7605221-B2 | Aromatic polycarbonateester block or random copolymer and polysiloxane blend primarily containing isophthalic and terephthalic acids, resorcinol and dimethylsilanediol monomers; films are radiation transparent; improved ductility at lower temperatures; aircraft components | SABIC INNOVATIVE PLASTICS IP B.V. (NL) | 2009-10-20 | — | — | US | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20080032241-A1 | Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2008-02-07 | — | — | US | disclosed |
| US-20070190449-A1 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
| US-20070122627-A1 | WEATHERABLE, THERMOSTABLE POLYMERS HAVING IMPROVED FLOW COMPOSITION | GENERAL ELECTRIC COMPANY (US) | 2007-05-31 | — | — | US | disclosed |
| US-20070027271-A1 | WEATHERABLE, THERMOSTABLE POLYMERS HAVING IMPROVED FLOW COMPOSITION | GENERAL ELECTRIC COMPANY (US) | 2007-02-01 | — | — | US | disclosed |
| US-7169859-B2 | Weatherable, thermostable polymers having improved flow composition | GENERAL ELECTRIC COMPANY (US) | 2007-01-30 | — | — | US | disclosed |
| US-5128234-A | PRODUCTION OF PHOTOPOLYMERIC FLEXOGRAPHIC RELIEF PRINTING PLATES | BASF AKTIENGESELLSCHAFT (DE) | 1992-07-07 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240240217-A1 | NUCLEOSIDES AND NUCLEOTIDES WITH 3' BLOCKING GROUPS AND CLEAVABLE LINKERS | NT5C2, DUT, NT5C3B | ALDH1A1 2007/4885LMNA 250/4885HSD17B10 2939/4885 |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | CHRM1, CHRM2, PKN2 | ALDH1A1 3349/4885LMNA 548/4885HSD17B10 2796/4885 |
| US-20120315580-A1 | SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN | H1-10, H1-0, C1S | ALDH1A1 2221/4885LMNA 3009/4885HSD17B10 374/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.