SCHEMBL97572

SCHEMBL97572

CCC(C)c1ccc(C(C)(O)C(F)(F)F)cc1

nearest known ligand 0.50

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 12/20 0.43
RORC P51449 1/20 0.41
PDE2A O00408 1/20 0.41
CYP2C9 P11712 1/20 0.39
ALDH1A1 P00352 1/20 0.39
TSHR P16473 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17017262 0.86 HSD11B1 (0.41) HSD11B1PDE2A
SCHEMBL12753478 0.84 TSHR (0.42) RORCPDE2ACYP2C9ALDH1A1TSHR
SCHEMBL2618661 0.84 NR1H2 (0.55)
SCHEMBL13137732 0.83 ALDH1A1 (0.42) RORCPDE2ACYP2C9ALDH1A1TSHR
SCHEMBL1626491 0.82 RORC (0.38) HSD11B1RORCALDH1A1
SCHEMBL17175646 0.81 PDE2A (0.61) RORCPDE2ACYP2C9ALDH1A1TSHR
SCHEMBL12009320 0.81 PDE2A (0.43) RORCPDE2ACYP2C9ALDH1A1TSHR
SCHEMBL12040182 0.81 RORC (0.46) RORCCYP2C9ALDH1A1TSHR
SCHEMBL12026598 0.81 HSD11B1 (0.50) HSD11B1PDE2ACYP2C9
SCHEMBL12753476 0.80 HDAC4 (0.46) HSD11B1RORCCYP2C9ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 467 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12038691-B2 Method for producing substrate with patterned film CENTRAL GLASS COMPANY, LIMITED (JP) 2024-07-16 US disclosed
US-12038692-B2 Method for producing substrate with patterned film and fluorine-containing copolymer CENTRAL GLASS COMPANY, LIMITED (JP) 2024-07-16 US disclosed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 US disclosed
US-20230400769-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-12-14 US disclosed
US-20230384674-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-30 US disclosed
US-20230367212-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-11-16 US disclosed
US-20230259029-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-08-17 US disclosed
US-20230236502-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-27 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-20230221640-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-13 US disclosed
US-20110014570-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110014571-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-01-13 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed
US-7510822-B2 Stimulation sensitive composition and compound FUJIFILM CORPORATION (JP) 2009-03-31 US disclosed
US-7335454-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2008-02-26 US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, XRN2, RXRA HSD11B1 4089/4885RORC 1745/4885PDE2A 3394/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.