SCHEMBL98592

SCHEMBL98592

Cc1cc([S+](c2ccccc2)c2ccccc2)cc(C)c1OS(=O)(=O)C(F)(F)F

nearest known ligand 0.34

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.33
MEN1 O00255 1/20 0.32
TSHR P16473 1/20 0.32
HTT P42858 1/20 0.32
KMT2A Q03164 1/20 0.32
ADORA2A P29274 1/20 0.30
ADORA1 P30542 1/20 0.30
NR3C1 P04150 1/20 0.30
PGR P06401 1/20 0.30
NR3C2 P08235 1/20 0.30
DRD2 P14416 2/20 0.30
DRD4 P21917 2/20 0.30
DRD3 P35462 2/20 0.30
NR1H2 P55055 1/20 0.30
NR1H3 Q13133 1/20 0.30
CXCR2 P25025 1/20 0.30
CHRM1 P11229 1/20 0.30
DRD1 P21728 1/20 0.30
DRD5 P21918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5117722 0.88 CA1 (0.36)
Trifluoromethanesulfonic Acid SCHEMBL3140872 0.81 ACHE (0.39) KMT2A
SCHEMBL5857840 0.81 HSD11B1 (0.30) HSD11B1CXCR2
SCHEMBL3839229 0.78 CA1 (0.37) HSD11B1MEN1TSHRKMT2ANR3C1
SCHEMBL13418131 0.77 CXCR2 (0.40) HSD11B1KMT2AADORA2AADORA1DRD2
SCHEMBL547685 0.77 CXCR2 (0.40) HSD11B1KMT2AADORA2AADORA1DRD2
SCHEMBL5858666 0.77 HTR1D (0.31) DRD2DRD4DRD3DRD1DRD5
Biphenyl SCHEMBL5526785 0.77 NR3C1 (0.39) MEN1TSHRKMT2AADORA2AADORA1
SCHEMBL1132630 0.77 KDM4E (0.37) HSD11B1MEN1KMT2ADRD2DRD4
SCHEMBL5561363 0.77 FFAR4 (0.37) HSD11B1MEN1TSHRKMT2ANR3C1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 137 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170293223-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-12 US disclosed
US-20170285469-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO, CO., LTD. (JP) 2017-10-05 US disclosed
US-20170285469-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO, CO., LTD. (JP) 2017-10-05 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9766541-B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-09-19 US disclosed
US-9766541-B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-09-19 US disclosed
US-9740105-B2 Resist pattern formation method and resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2017-08-22 US disclosed
US-20130189619-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-25 US disclosed
US-20130157197-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-8415082-B2 Resist composition, method of forming resist pattern, compound and method of producing the same, acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-09 US disclosed
US-20130045443-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-21 US disclosed
US-20130022911-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-24 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120148955-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120058430-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-08 US disclosed
US-20110287362-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2011-11-24 US disclosed
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR RER1, GLRA1, GRIN1 HSD11B1 1841/4885MEN1 153/4885TSHR 1039/4885
US-20110287362-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, SCO2 HSD11B1 2232/4885MEN1 321/4885TSHR 1201/4885
US-20120058430-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR ASIC1, SLC11A2, RER1 HSD11B1 742/4885MEN1 225/4885TSHR 3590/4885
US-20120148955-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND C1R, SLC11A2, RER1 HSD11B1 818/4885MEN1 225/4885TSHR 2196/4885
US-20170293223-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT SLC11A2, DRD1, ZYX HSD11B1 63/4885MEN1 955/4885TSHR 4068/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.