Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 1/20 | 0.31 |
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | CA9 | Q16790 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | ALDH2 | P05091 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL197051 | 0.85 | TSHR (0.32) | ALDH1A1 | |
| SCHEMBL12420088 | 0.81 | — | — | |
| SCHEMBL193410 | 0.80 | CA12 (0.43) | CA12CA1CA2CA9MAPT | |
| SCHEMBL12420086 | 0.78 | — | — | |
| SCHEMBL19959611 | 0.76 | LMNA (0.41) | CA12CA1CA9MAPTALDH1A1 | |
| SCHEMBL11316780 | 0.76 | LMNA (0.37) | CA12CA1CA9MAPTALDH1A1 | |
| SCHEMBL19605924 | 0.74 | — | — | |
| SCHEMBL15800861 | 0.73 | LMNA (0.39) | CA12CA1CA2CA9MAPT | |
| SCHEMBL9075821 | 0.73 | ALDH1A1 (0.30) | ALDH1A1 | |
| SCHEMBL11436620 | 0.73 | ALDH1A1 (0.32) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20180107113-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-04-19 | — | — | US | disclosed |
| US-20180081270-A1 | RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180074404-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-9908831-B2 | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9785048-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-10-10 | — | — | US | disclosed |
| US-9746769-B2 | — | — | 2017-08-29 | — | — | US | disclosed |
| US-20170183279-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20130101812-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20120282546-A1 | CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-11-08 | — | — | US | disclosed |
| US-20120251947-A1 | CYCLIC COMPOUND, METHOD OF PRODUCING THE SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-10-04 | — | — | US | disclosed |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120052449-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20110287234-A1 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2011-11-24 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (11 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120251947-A1 | CYCLIC COMPOUND, METHOD OF PRODUCING THE SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | MRE11, SLC11A2, CROCC | CA12 606/4885CA1 342/4885CA2 3180/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CA12 2546/4885CA1 1120/4885CA2 3332/4885 |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | PARG, RAD51, SRMS | CA12 1872/4885CA1 1834/4885CA2 3153/4885 |
| US-20170183279-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | ADH1C, FABP6, ADH1A | CA12 2338/4885CA1 3818/4885CA2 4460/4885 |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | SLC11A2, ABCC1, FBL | CA12 3727/4885CA1 3866/4885CA2 3898/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | CA12 2189/4885CA1 1531/4885CA2 4687/4885 |
| US-20120282546-A1 | CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | CROCC, XRCC6, CHEK1 | CA12 1911/4885CA1 1677/4885CA2 4317/4885 |
| US-20180107113-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | CROCC, REV1, PARG | CA12 2285/4885CA1 1691/4885CA2 2930/4885 |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | CA12 2189/4885CA1 1531/4885CA2 4687/4885 |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, RER1, REV1 | CA12 2667/4885CA1 1807/4885CA2 4834/4885 |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | WEE1, SLC11A2, RAD1 | CA12 3084/4885CA1 2746/4885CA2 4845/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.