SCHEMBL10035500

SCHEMBL10035500

CC12CC3CC1C(OC2=O)C3O

nearest known ligand 0.31

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
▸ MGAM O43451 1/20 0.31
▸ CA1 P00915 1/20 0.31
▸ CA2 P00918 1/20 0.31
▸ GAA P10253 1/20 0.31
▸ SI P14410 1/20 0.31
▸ ACHE P22303 1/20 0.31
▸ MGAM2 Q2M2H8 1/20 0.31
▸ NPC1 O15118 1/20 0.31
▸ MITF O75030 1/20 0.31
▸ LMNA P02545 1/20 0.31
▸ NFKB1 P19838 1/20 0.31
▸ HTT P42858 1/20 0.31
▸ RAB9A P51151 1/20 0.31
▸ NFKB2 Q00653 1/20 0.31
▸ RELA Q04206 1/20 0.31
▸ SMN1; SMN2 Q16637 1/20 0.31
▸ PTPN1 P18031 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18022193 0.81 MAPT (0.31) —
SCHEMBL19249994 0.81 MAPT (0.31) —
SCHEMBL19848753 0.81 MAPT (0.31) —
SCHEMBL18872442 0.81 MAPT (0.31) —
SCHEMBL16743494 0.81 MAPT (0.31) —
SCHEMBL13057396 0.81 MAPT (0.31) —
SCHEMBL13481220 0.77 CES2 (0.30) —
SCHEMBL16727303 0.75 OPRK1 (0.33) —
SCHEMBL20109690 0.75 OPRK1 (0.33) —
SCHEMBL2754972 0.73 GRM5 (0.30) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023120200-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-06-29 — — WO disclosed
US-8802798-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2014-08-12 — — US disclosed
US-8802798-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2014-08-12 — — US disclosed
US-8791288-B2 Acid-labile ester monomer having spirocyclic structure, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-29 — — US disclosed
US-8791288-B2 Acid-labile ester monomer having spirocyclic structure, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-29 — — US disclosed
US-8475999-B2 Compound and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-07-02 — — US disclosed
US-8475999-B2 Compound and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-07-02 — — US disclosed
WO-2012133939-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 — — WO disclosed
US-8119751-B2 — — 2012-02-21 — — US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 — — US disclosed
US-7576223-B2 Polymer of a (meth)acryloyloxy)ethoxycarbonyl)sulfonium sulfonate, e.g., 1-[2-(2-methylacryloyloxy)ethoxycarbonyl]tetrahydrothiophenium perfluorobutanesulfonate; used a an acid generator in excimer laser lithography; stable fine patterns without collapse and improved line edge roughness. SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 — — US disclosed
US-7531686-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-05-12 — — US disclosed
US-7531686-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-05-12 — — US disclosed
US-20090023878-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2009-01-22 — — US disclosed
US-20080269506-A1 Chemical amplification type resist composition YAMADA AIRI 2008-10-30 — — US disclosed
US-20080269506-A1 Chemical amplification type resist composition YAMADA AIRI 2008-10-30 — — US disclosed
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-31 — — US disclosed
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-31 — — US disclosed
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-03 — — US disclosed
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-03 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080269506-A1 Chemical amplification type resist composition ASIC1, POLR2B, POLR2A MGAM 1215/4885CA1 76/4885CA2 33/4885
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN3, NHERF1, HCN4 MGAM 4077/4885CA1 388/4885CA2 53/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 MGAM 4829/4885CA1 2120/4885CA2 1592/4885
US-20070100158-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SLC26A3, RFC1, RFC2 MGAM 4670/4885CA1 273/4885CA2 33/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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