Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HPGD | P15428 | 5/20 | 0.36 |
| ▸ | PPARA | Q07869 | 2/20 | 0.34 |
| ▸ | PPARG | P37231 | 2/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | PPARD | Q03181 | 1/20 | 0.33 |
| ▸ | BCHE | P06276 | 1/20 | 0.33 |
| ▸ | ACHE | P22303 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22681155 | 0.89 | L3MBTL1 (0.39) | HPGDPPARAPPARGPPARDBCHE | |
| SCHEMBL10088186 | 0.88 | NR3C1 (0.38) | HPGDPPARGNR3C1LMNA | |
| SCHEMBL17175347 | 0.88 | HPGD (0.35) | HPGDPPARAPPARGKMT2APPARD | |
| SCHEMBL10138859 | 0.87 | LMNA (0.43) | HPGDPPARGKMT2ALMNAHTT | |
| SCHEMBL21731894 | 0.86 | HPGD (0.39) | HPGDPPARAPPARGPPARDBCHE | |
| SCHEMBL11960786 | 0.82 | HPGD (0.36) | HPGDPPARAPPARGPPARDNR3C1 | |
| SCHEMBL10088188 | 0.82 | ALDH1A1 (0.39) | PPARGKMT2AL3MBTL1 | |
| SCHEMBL111625 | 0.82 | ALDH1A1 (0.42) | PPARAPPARGKMT2APPARD | |
| SCHEMBL14049134 | 0.82 | ALDH1A1 (0.42) | PPARAPPARGKMT2APPARD | |
| SCHEMBL11922905 | 0.81 | ABCB11 (0.39) | PPARAPPARGKMT2APPARDBCHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-12-12 | — | — | US | disclosed |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-7794916-B2 | Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-09-14 | — | — | US | disclosed |
| US-7718344-B2 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2010-05-18 | — | — | US | disclosed |
| US-7629107-B2 | Positive photosensitive composition, polymer compounds for use in the positive photosensitive composition, manufacturing method of the polymer compounds, compounds for use in the manufacture of the polymer compounds, and pattern-forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-12-08 | — | — | US | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20080187863-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080085464-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, LPAR1, TLR7 | HPGD 4796/4885PPARA 647/4885PPARG 305/4885 |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | HPGD 984/4885PPARA 282/4885PPARG 211/4885 |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | RER1, AFF1, AFF4 | HPGD 4235/4885PPARA 1667/4885PPARG 1899/4885 |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, HCN3, RER1 | HPGD 1188/4885PPARA 1184/4885PPARG 1109/4885 |
| US-11820736-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, H1-2 | HPGD 2066/4885PPARA 1062/4885PPARG 663/4885 |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | H1-10, H1-0, CHRM1 | HPGD 3647/4885PPARA 1923/4885PPARG 1197/4885 |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, H1-0, CA7 | HPGD 3557/4885PPARA 1558/4885PPARG 535/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.