Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 2/20 | 0.43 |
| ▸ | HTT | P42858 | 2/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.43 |
| ▸ | HPGD | P15428 | 7/20 | 0.41 |
| ▸ | PPARG | P37231 | 3/20 | 0.37 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | APOBEC3G | Q9HC16 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10088186 | 0.90 | NR3C1 (0.38) | LMNAHPGDPPARGALDH1A1MAPT | |
| SCHEMBL10148404 | 0.87 | HPGD (0.36) | LMNAHTTSMN1; SMN2HPGDPPARG | |
| SCHEMBL14220826 | 0.85 | HPGD (0.39) | LMNAHTTSMN1; SMN2HPGDPPARG | |
| SCHEMBL14219828 | 0.84 | HPGD (0.40) | LMNAHTTSMN1; SMN2HPGDPPARG | |
| SCHEMBL10148494 | 0.81 | LMNA (0.39) | LMNAHTTSMN1; SMN2PPARGTSHR | |
| SCHEMBL10088188 | 0.81 | ALDH1A1 (0.39) | PPARGTSHRMEN1KMT2AALDH1A1 | |
| SCHEMBL14049134 | 0.81 | ALDH1A1 (0.42) | PPARGTSHRMEN1KMT2AALDH1A1 | |
| SCHEMBL111625 | 0.81 | ALDH1A1 (0.42) | PPARGTSHRMEN1KMT2AALDH1A1 | |
| SCHEMBL11922905 | 0.81 | ABCB11 (0.39) | PPARGTSHRKMT2AALDH1A1 | |
| SCHEMBL13920798 | 0.80 | ALDH1A1 (0.39) | LMNAHTTHPGDPPARGMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8017299-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-09-13 | — | — | US | disclosed |
| US-7858289-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-12-28 | — | — | US | disclosed |
| US-7718344-B2 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2010-05-18 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090202946-A1 | POSITIVE RESIST COMPOSITION FOR USE WITH ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090111047-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090111053-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | ADH5, SRRM2, ADH1A | LMNA 3834/4885HTT 4431/4885SMN1; SMN2 1416/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.