SCHEMBL10171087

SCHEMBL10171087

C=CC(=O)OCCOC(=O)C(F)(F)C(F)(F)F

nearest known ligand 0.55

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.55
ALDH1A1 P00352 4/20 0.55
TP53 P04637 3/20 0.55
HIF1A Q16665 3/20 0.55
HSD17B10 Q99714 1/20 0.55
CYP3A4 P08684 2/20 0.50
THRB P10828 2/20 0.46
HPGD P15428 1/20 0.46
MAPK1 P28482 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18477590 0.87 TSHR (0.53) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL13835523 0.86 TSHR (0.48) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL21474659 0.85 TSHR (0.52) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL8149128 0.84 TSHR (0.59) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL13557336 0.84 TSHR (0.59) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL12521416 0.83 CA1 (0.39) CA1CA2
SCHEMBL10094784 0.83 TSHR (0.53) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL14498156 0.82 TSHR (0.58) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL17445919 0.81 TSHR (0.55) TSHRALDH1A1TP53HIF1AHSD17B10
SCHEMBL13871148 0.80 TSHR (0.60) TSHRALDH1A1TP53HIF1AHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9233945-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-12 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-9051247-B2 Salt, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-8802352-B2 Salt, photoresist composition and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-08-12 US disclosed
US-8765357-B2 Resin and photoresist composition comprising same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-07-01 US disclosed
US-8741544-B2 Salt, photoresist composition and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-06-03 US disclosed
US-8741541-B2 Compound, resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-06-03 US disclosed
US-8574811-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-11-05 US disclosed
US-20130095425-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-04-18 US disclosed
US-20130095424-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-04-18 US disclosed
US-20130052588-A1 SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-02-28 US disclosed
US-20130040239-A1 SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-02-14 US disclosed
US-20120328986-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-12-27 US disclosed
US-20120295201-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-11-22 US disclosed
US-20120270154-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-25 US disclosed
US-20120052443-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120328986-A1 SALT, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN CLIC1, ELOVL6, RER1 TSHR 2029/4885ALDH1A1 1554/4885TP53 3987/4885
US-20130095424-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION C1R, SULT1E1, SULT1A1 TSHR 1841/4885ALDH1A1 1186/4885TP53 4495/4885
US-20120295201-A1 COMPOUND, RESIN, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN C1R, C9, TMT1A TSHR 1487/4885ALDH1A1 1892/4885TP53 4276/4885
US-20130040239-A1 SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN CRY1, H1-0, SPIN1 TSHR 2801/4885ALDH1A1 1898/4885TP53 3052/4885
US-20130052588-A1 SALT, PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN RER1, COL1A1, H1-0 TSHR 2428/4885ALDH1A1 1936/4885TP53 1405/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.