SCHEMBL10172880

SCHEMBL10172880

O=C(OCCS(=O)(=O)O)C12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.53

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.53
NPSR1 Q6W5P4 2/20 0.52
ABL1 P00519 1/20 0.45
TSHR P16473 1/20 0.45
RIN1 Q13671 1/20 0.45
GAA P10253 1/20 0.44
L3MBTL1 Q9Y468 2/20 0.44
NPC1 O15118 5/20 0.43
RAB9A P51151 5/20 0.43
USP2 O75604 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
HSD11B1 P28845 2/20 0.41
LMNA P02545 1/20 0.41
POLB P06746 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10172812 0.92 ALDH1A1 (0.51) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL20008913 0.91 NPSR1 (0.57) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL10172854 0.91 ALDH1A1 (0.50) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL11953052 0.87 NPSR1 (0.40) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL98471 0.85 ALDH1A1 (0.47) ALDH1A1NPSR1GAALMNA
SCHEMBL11959259 0.83 ALDH1A1 (0.59) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL12204997 0.81 ALDH1A1 (0.46) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL19978631 0.81 ALDH1A1 (0.46) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL18775888 0.80 NPSR1 (0.47) ALDH1A1NPSR1ABL1TSHRRIN1
SCHEMBL12977210 0.79 ALDH1A1 (0.47) ALDH1A1NPSR1ABL1TSHRRIN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240231230-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-07-11 US disclosed
US-20240231230-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-07-11 US disclosed
WO-2023189502-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE JSR株式会社 2023-10-05 WO disclosed
WO-2023189503-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND PHOTODEGRADABLE BASE JSR株式会社 2023-10-05 WO disclosed
WO-2023153296-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-08-17 WO disclosed
WO-2023120200-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-06-29 WO disclosed
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
WO-2023090129-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR株式会社 2023-05-25 WO disclosed
US-20230140810-A1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-29 US disclosed
US-20180072930-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, AND METHOD FOR MANUFACTURING A BIO-ELECTRODE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-15 US disclosed
US-20180072930-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, AND METHOD FOR MANUFACTURING A BIO-ELECTRODE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-15 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-20120196228-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-02 US disclosed
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR ALDH1A1 4520/4885NPSR1 496/4885ABL1 610/4885
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound RB1, RBBP5, RRM2B ALDH1A1 2376/4885NPSR1 2791/4885ABL1 816/4885
US-20180086948-A1 ADHESIVE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING A BIO-ELECTRODE, AND SALT SLC9A1, FN1, EPCAM ALDH1A1 749/4885NPSR1 1435/4885ABL1 1000/4885
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND RAD51, RER1, ATP6AP1 ALDH1A1 1300/4885NPSR1 3120/4885ABL1 1054/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.