SCHEMBL19978631

SCHEMBL19978631

O=C(OCCC(F)CS(=O)(=O)O)C12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.46
NPSR1 Q6W5P4 2/20 0.45
LMNA P02545 1/20 0.43
L3MBTL1 Q9Y468 2/20 0.41
GAA P10253 1/20 0.40
ABL1 P00519 1/20 0.40
TSHR P16473 1/20 0.40
RIN1 Q13671 1/20 0.40
NPC1 O15118 5/20 0.39
RAB9A P51151 5/20 0.39
USP2 O75604 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
HSD11B1 P28845 1/20 0.36
POLB P06746 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18232610 0.88 ALDH1A1 (0.48) ALDH1A1NPSR1LMNAL3MBTL1GAA
SCHEMBL11932956 0.87 PRKCA (0.43) ALDH1A1NPSR1GAA
SCHEMBL18232581 0.81 ALDH1A1 (0.45) ALDH1A1NPSR1LMNAL3MBTL1GAA
SCHEMBL10172880 0.81 ALDH1A1 (0.53) ALDH1A1NPSR1LMNAL3MBTL1GAA
Hydrogen Sulfide SCHEMBL29869678 0.81 ALDH1A1 (0.44) ALDH1A1NPSR1LMNAL3MBTL1GAA
SCHEMBL26312820 0.80 NPSR1 (0.38) ALDH1A1NPSR1LMNA
SCHEMBL29870112 0.79 NPSR1 (0.44) ALDH1A1NPSR1LMNAL3MBTL1GAA
SCHEMBL10172812 0.79 ALDH1A1 (0.51) ALDH1A1NPSR1LMNAL3MBTL1GAA
SCHEMBL17491028 0.78 ALDH1A1 (0.44) ALDH1A1NPSR1LMNAL3MBTL1GAA
SCHEMBL10172854 0.78 ALDH1A1 (0.50) ALDH1A1NPSR1LMNAL3MBTL1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-06 US disclosed
US-11635686-B2 Resist composition, method of forming resist pattern, and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-25 US disclosed
US-20220121116-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-21 US disclosed
US-20210389668-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, ACID GENERATOR, AND METHOD OF PRODUCING COMPOUND TOKYO OHKA KOGYO CO LTD (JP) 2021-12-16 US disclosed
US-20210157234-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2021-05-27 US disclosed
US-20210141307-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2021-05-13 US disclosed
US-20200409264-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-31 US disclosed
US-10866514-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2020-12-15 US disclosed
US-20200174366-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-04 US disclosed
US-10401727-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2019-09-03 US disclosed
US-20180180997-A1 RESIN COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-06-28 US disclosed
US-20180081269-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081271-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081269-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081271-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-03-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11667605-B2 Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound RB1, RBBP5, RRM2B ALDH1A1 2376/4885NPSR1 2791/4885LMNA 1483/4885
US-20210389668-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, ACID GENERATOR, AND METHOD OF PRODUCING COMPOUND RB1, RBBP5, RRM2B ALDH1A1 2376/4885NPSR1 2791/4885LMNA 1483/4885
US-11635686-B2 Resist composition, method of forming resist pattern, and compound FXR1, HNRNPA1, RBM3 ALDH1A1 3035/4885NPSR1 705/4885LMNA 1440/4885
US-20200174366-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND FXR1, HNRNPA1, RBM3 ALDH1A1 3035/4885NPSR1 705/4885LMNA 1440/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.