SCHEMBL106159

SCHEMBL106159

CCCCC(C(=O)[O-])C(=O)[O-].c1ccc([S+](c2ccccc2)c2ccccc2)cc1.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.47

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.47
CNR2 P34972 2/20 0.41
CES2 O00748 3/20 0.40
CES1 P23141 3/20 0.40
CA2 P00918 3/20 0.40
TDP1 Q9NUW8 1/20 0.38
ALDH1A1 P00352 2/20 0.38
MEN1 O00255 1/20 0.38
MAPT P10636 1/20 0.38
MAPK1 P28482 1/20 0.38
KMT2A Q03164 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
CYP3A4 P08684 1/20 0.37
CA1 P00915 1/20 0.37
MMP1 P03956 4/20 0.37
MMP7 P09237 3/20 0.37
MMP12 P39900 3/20 0.37
MMP13 P45452 3/20 0.37
ACE P12821 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL110056 0.95 POLB (0.46) POLBCNR2CES2CES1CA2
SCHEMBL105011 0.90 CYP3A4 (0.39) POLBCES2CES1SMN1; SMN2CYP3A4
SCHEMBL105612 0.85 PPARG (0.41) POLBCES2CES1TDP1SMN1; SMN2
Ethylmalonate SCHEMBL107811 0.83 MEN1 (0.45) POLBCES2CES1ALDH1A1MEN1
Ethylmalonate SCHEMBL110047 0.81 MEN1 (0.40) POLBCES2CES1ALDH1A1MEN1
SCHEMBL105351 0.81 POLB (0.47) POLBCNR2CES2CES1CA2
Valeric Acid SCHEMBL106459 0.78 CA1 (0.55) CES2CES1MEN1KMT2ACA1
Hexanoate SCHEMBL105634 0.77 CES2 (0.53) CES2CES1CA1
Potassium Ion SCHEMBL108612 0.76 CA2 (0.56) CES2CES1CA2MAPK1CYP3A4
SCHEMBL21269384 0.76 CA2 (0.56) CES2CES1CA2MAPK1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 105 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
EP-1845132-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2009-01-21 EP disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 POLB 333/4885CNR2 4855/4885CES2 2501/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA POLB 1187/4885CNR2 4643/4885CES2 4176/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX POLB 1364/4885CNR2 3306/4885CES2 2254/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 POLB 850/4885CNR2 1523/4885CES2 936/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR POLB 2216/4885CNR2 1830/4885CES2 2647/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 POLB 2434/4885CNR2 4267/4885CES2 4119/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.