Salicylic Acid

Salicylic Acid

SCHEMBL106469

C[N+](C)(C)C.O=C([O-])c1ccccc1O

nearest known ligand 0.79

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHE

The experimentally established mechanism targets of Salicylic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 10/20 0.79
HPGD P15428 8/20 0.79
ALDH1A1 P00352 6/20 0.79
SMN1; SMN2 Q16637 3/20 0.52
CA12 O43570 1/20 0.52
CA1 P00915 1/20 0.52
CA2 P00918 1/20 0.52
HMGB1 P09429 1/20 0.52
CA4 P22748 1/20 0.52
CA6 P23280 1/20 0.52
CA7 P43166 1/20 0.52
CA9 Q16790 1/20 0.52
NAPRT Q6XQN6 1/20 0.52
CA14 Q9ULX7 1/20 0.52
LMNA P02545 7/20 0.50
HSD17B10 Q99714 7/20 0.50
TSHR P16473 3/20 0.50
MAPT P10636 2/20 0.50
MEN1 O00255 3/20 0.48
NPC1 O15118 3/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Salicylic Acid SCHEMBL6249450 0.91 KDM4E (0.95) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL8589272 0.90 KDM4E (0.70) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL5142971 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL299753 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL455422 0.89 KDM4E (1.00) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL1932763 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL10490726 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL224818 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL3399561 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12
Salicylic Acid SCHEMBL217212 0.89 KDM4E (0.91) KDM4EHPGDALDH1A1SMN1; SMN2CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 167 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-4885115-A Liquid electrolyte for use in electrolytic capacitor NIPPON CHEMI-CON CORPORATION (JP) 1989-12-05 US claimed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-20260003277-A1 NEGATIVE PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM TOKYO OHKA KOGYO CO LTD (JP) 2026-01-01 US disclosed
US-20260003282-A1 PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM TOKYO OHKA KOGYO CO LTD (JP) 2026-01-01 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-20050074556-A1 Film-forming composition, production process therefor, and porous insulating film FUJI PHOTO FILM CO., LTD. 2005-04-07 US disclosed
US-6797682-B2 TO STRIP A PHOTORESIST LAYER AND A TITANIUM OXIDE IN PRODUCTION OF E.G. SEMICONDUCTOR INTEGRATED CIRCUITS, PRINTED WIRING BOARDS AND LIQUID CRYSTALS TOSOH CORPORATION (JP) 2004-09-28 US disclosed
EP-0708452-B1 Ion-conductive polymer electrolyte, method for producing the electrolyte and capacitors using the electrolyte MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2004-05-26 EP disclosed
US-20030233008-A1 Process for the preparation of carboxylic benzyl esters BAYER AKTIENGESELLSCHAFT (DE) 2003-12-18 US disclosed
EP-1371627-A1 Process for the preparation of carboxylic acid benzyl esters Bayer Aktiengesellschaft (DE) 2003-12-17 EP disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed
US-20020128164-A1 Resist stripper TOSOH CORPORATION 2002-09-12 US disclosed
EP-1211563-A1 Resist stripper Tosoh Corporation (JP) 2002-06-05 EP disclosed
EP-0708452-A1 Ion-conductive polymer electrolyte, method for producing the electrolyte and capacitors using the electrolyte MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-04-24 EP disclosed
US-4885115-A Liquid electrolyte for use in electrolytic capacitor NIPPON CHEMI-CON CORPORATION (JP) 1989-12-05 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030233008-A1 Process for the preparation of carboxylic benzyl esters CPS1, BCAT2, BCAT1 KDM4E 144/4885HPGD 3716/4885ALDH1A1 1490/4885
US-20260003282-A1 PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM H1-4, H1-10, H1-0 KDM4E 650/4885HPGD 4319/4885ALDH1A1 1668/4885
US-20260003277-A1 NEGATIVE PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM H1-4, H1-10, H1-0 KDM4E 799/4885HPGD 4385/4885ALDH1A1 2163/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA KDM4E 757/4885HPGD 4883/4885ALDH1A1 4472/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 KDM4E 588/4885HPGD 4878/4885ALDH1A1 4452/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR KDM4E 2013/4885HPGD 4586/4885ALDH1A1 1558/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 KDM4E 2013/4885HPGD 4870/4885ALDH1A1 4150/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.