Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 5/20 | 0.47 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.47 |
| ▸ | TP53 | P04637 | 1/20 | 0.47 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.46 |
| ▸ | LMNA | P02545 | 2/20 | 0.46 |
| ▸ | SLC22A1 | O15245 | 2/20 | 0.44 |
| ▸ | HTT | P42858 | 1/20 | 0.44 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.44 |
| ▸ | CES2 | O00748 | 3/20 | 0.43 |
| ▸ | CES1 | P23141 | 3/20 | 0.43 |
| ▸ | HPGD | P15428 | 3/20 | 0.43 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.42 |
| ▸ | NAAA | Q02083 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.41 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.41 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.41 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrabuthylammonium SCHEMBL28459959 | 0.93 | TSHR (0.42) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL106856 | 0.93 | ALDH1A1 (0.47) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL28624852 | 0.92 | CYP3A4 (0.50) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL3702709 | 0.91 | TSHR (0.44) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL107740 | 0.90 | KDM4E (0.59) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrapropylammonium SCHEMBL105669 | 0.89 | ALDH1A1 (0.45) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL23539134 | 0.89 | TSHR (0.41) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL7188512 | 0.89 | MAPT (0.42) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL1684318 | 0.89 | HPGD (0.51) | TSHRCYP3A4TP53MAPK1ALDH1A1 | |
| Tetrabuthylammonium SCHEMBL23522665 | 0.89 | HDAC3 (0.49) | TSHRCYP3A4TP53MAPK1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 123 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| EP-0651023-B1 | Curable resin composition for coating uses | NIPPON PAINT CO LTD (JP) | 1999-07-14 | — | — | EP | disclosed |
| EP-0737726-B1 | One-component, thermosetting resin composition for coating use | NIPPON PAINT CO LTD (JP) | 1999-07-14 | — | — | EP | disclosed |
| US-5911099-A | Electroconductiive member and electrophotogrpahic apparatus | BRIDGESTONE CORPORATION (JP) | 1999-06-08 | — | — | US | disclosed |
| US-5827928-A | MICHAEL REACTION CURABLE; CATALYZED WITH A QUATERNARY COMPOUND IN THE PRESENCE OF A FIVE-MEMBERED CYCLIC CARBONATE | NIPPON PAINT CO., LTD. (JP) | 1998-10-27 | — | — | US | disclosed |
| EP-0808860-A2 | Curable resin composition for coating use | NIPPON PAINT CO., LTD. (JP) | 1997-11-26 | — | — | EP | disclosed |
| EP-0737726-A1 | One-component, thermosetting resin composition for coating use | Nippon Paint Co., Ltd. (JP) | 1996-10-16 | — | — | EP | disclosed |
| US-5565525-A | CURABLE THROUGH MICHAEL REACTION | NIPPON PAINT CO., LTD. (JP) | 1996-10-15 | — | — | US | disclosed |
| EP-0651023-A2 | Curable resin composition for coating uses | Nippon Paint Co., Ltd. (JP) | 1995-05-03 | — | — | EP | disclosed |
| US-5200472-A | Alkyl acrylate, alkoxyalkyl acrylate, epoxy-containing vinyl monomer, unsaturated aryl ester; diphenyl phthalate, quaternary ammonium, phosphonium, urea or guanidine crosslinkers | NIPPON MEKTRON, LIMITED (JP) | 1993-04-06 | — | — | US | disclosed |
| US-4324885-A | QUATERNARY AMMONIUM OR PHOSPHONIUM CATALYST | GENERAL ELECTRIC COMPANY (US) | 1982-04-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | TSHR 4787/4885CYP3A4 1736/4885TP53 3039/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | TSHR 3217/4885CYP3A4 4669/4885TP53 4698/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | TSHR 439/4885CYP3A4 3839/4885TP53 4176/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | TSHR 770/4885CYP3A4 3527/4885TP53 2594/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | TSHR 446/4885CYP3A4 2742/4885TP53 4717/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | TSHR 2745/4885CYP3A4 4523/4885TP53 4703/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.