Tetrabuthylammonium

Tetrabuthylammonium

SCHEMBL106856

CCCC[N+](CCCC)(CCCC)CCCC.O=C([O-])c1ccccc1C(=O)O

nearest known ligand 0.47

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.47
TSHR P16473 4/20 0.45
ALOX15 P16050 1/20 0.45
CA12 O43570 2/20 0.44
CA9 Q16790 2/20 0.44
KDM4E B2RXH2 2/20 0.44
MEN1 O00255 1/20 0.44
RECQL P46063 1/20 0.44
KMT2A Q03164 1/20 0.44
CES2 O00748 2/20 0.42
CES1 P23141 2/20 0.42
TP53 P04637 1/20 0.42
CYP3A4 P08684 1/20 0.42
MAPK1 P28482 1/20 0.42
PTPN11 Q06124 2/20 0.42
PLK1 P53350 1/20 0.42
LMNA P02545 1/20 0.41
CYP2C9 P11712 1/20 0.40
HPGD P15428 1/20 0.40
POLB P06746 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrabuthylammonium SCHEMBL106854 0.93 TSHR (0.47) ALDH1A1TSHRKDM4EMEN1KMT2A
Tetrabuthylammonium SCHEMBL106855 0.92 ALDH1A1 (0.54) ALDH1A1TSHRALOX15CA12CA9
Tetrapropylammonium SCHEMBL105671 0.90 ALDH1A1 (0.48) ALDH1A1TSHRALOX15CA12CA9
Tetrabuthylammonium SCHEMBL11218875 0.88 KDM4E (0.53) ALDH1A1TSHRCA12CA9KDM4E
Tetrabuthylammonium SCHEMBL28459959 0.87 TSHR (0.42) ALDH1A1TSHRKDM4EMEN1KMT2A
Tetrabuthylammonium SCHEMBL10735564 0.87 ALDH1A1 (0.53) ALDH1A1TSHRCA12CA9KDM4E
Phthalic Acid SCHEMBL8438178 0.86 ALDH1A1 (0.47) ALDH1A1TSHRCA12CA9KDM4E
Cetrimonium SCHEMBL8439271 0.86 ALDH1A1 (0.47) ALDH1A1TSHRCA12CA9KDM4E
Phthalic Acid SCHEMBL8434740 0.86 ALDH1A1 (0.47) ALDH1A1TSHRCA12CA9KDM4E
Tetrabuthylammonium SCHEMBL28624852 0.86 CYP3A4 (0.50) ALDH1A1TSHRKDM4EMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
US-5959028-A UNSATURATED CARBONYL COMPOUND AND ACTIVE METHYLENE GROUP COMPOUND, ASYMMETRIC MALONATE ESTER FOR PROTECTIVE COATINGS NIPPON PAINT CO., LTD. (JP) 1999-09-28 US disclosed
US-5933693-A Electroconductive elastic member and electrophotographic apparatus using same BRIDGESTONE CORPORATION (JP) 1999-08-03 US disclosed
EP-0651023-B1 Curable resin composition for coating uses NIPPON PAINT CO LTD (JP) 1999-07-14 EP disclosed
EP-0737726-B1 One-component, thermosetting resin composition for coating use NIPPON PAINT CO LTD (JP) 1999-07-14 EP disclosed
US-5911099-A Electroconductiive member and electrophotogrpahic apparatus BRIDGESTONE CORPORATION (JP) 1999-06-08 US disclosed
US-5827928-A MICHAEL REACTION CURABLE; CATALYZED WITH A QUATERNARY COMPOUND IN THE PRESENCE OF A FIVE-MEMBERED CYCLIC CARBONATE NIPPON PAINT CO., LTD. (JP) 1998-10-27 US disclosed
EP-0808860-A2 Curable resin composition for coating use NIPPON PAINT CO., LTD. (JP) 1997-11-26 EP disclosed
EP-0737726-A1 One-component, thermosetting resin composition for coating use Nippon Paint Co., Ltd. (JP) 1996-10-16 EP disclosed
US-5565525-A CURABLE THROUGH MICHAEL REACTION NIPPON PAINT CO., LTD. (JP) 1996-10-15 US disclosed
EP-0651023-A2 Curable resin composition for coating uses Nippon Paint Co., Ltd. (JP) 1995-05-03 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 ALDH1A1 1586/4885TSHR 4787/4885ALOX15 2855/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA ALDH1A1 4472/4885TSHR 3217/4885ALOX15 2512/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX ALDH1A1 4644/4885TSHR 439/4885ALOX15 2677/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 ALDH1A1 4452/4885TSHR 770/4885ALOX15 4108/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR ALDH1A1 1558/4885TSHR 446/4885ALOX15 326/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 ALDH1A1 4150/4885TSHR 2745/4885ALOX15 1928/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.