Known targets — ChEMBL curated mechanism
ACVR1ADORA1ADORA2AADORA2BADORA3ESR1ESR2FLT3GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSC1GSK3AGSK3BHRH1HRH2HTR7IDH1IDH2IMPA1IRAK1JAK1JAK2JAK3MEN1OPRM1P2RX3PDE5ASCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASIGMAR1SLC6A2SYKTACR1TOP2ATYK2
The experimentally established mechanism targets of Citric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 1/20 | 0.70 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.48 |
| ▸ | HMGCR | P04035 | 1/20 | 0.37 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.37 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.37 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.37 |
| ▸ | ACLY | P53396 | 3/20 | 0.31 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.31 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.31 |
| ▸ | CPT2 | P23786 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Citric Acid SCHEMBL475574 | 0.98 | CA4 (0.73) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL107372 | 0.98 | CA4 (0.73) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL761595 | 0.95 | CA4 (0.70) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL4889866 | 0.95 | CA4 (0.70) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL73056 | 0.95 | CA4 (0.77) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL2227442 | 0.95 | CA4 (0.70) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL104389 | 0.95 | CA4 (0.70) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL5471630 | 0.95 | CA4 (0.76) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL6864505 | 0.93 | CA4 (0.74) | CA4ALDH1A1HMGCRCHRM1TBXA2R | |
| Citric Acid SCHEMBL1410612 | 0.93 | CA4 (0.67) | CA4ALDH1A1HMGCRCHRM1TBXA2R |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11124418-B2 | Activated carbons with high surface areas and methods of making same | ADVEN INDUSTRIES, INC. (CA) | 2021-09-21 | — | — | US | claimed |
| US-20190202702-A1 | Activated Carbons with High Surface Areas and Methods of Making Same | Adven Industries Inc. (CA) | 2019-07-04 | — | — | US | claimed |
| JP-6273938-A | — | — | None | — | — | JP | disclosed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| EP-2011829-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-2011830-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-1867681-B1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHINETSU CHEMICAL CO (JP) | 2008-12-31 | — | — | EP | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| EP-1867681-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-12-19 | — | — | EP | disclosed |
| EP-1845132-A2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shinetsu Chemical Co., Ltd. (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| JP-H06273938-A | METHOD FOR LOWERING PH OF WASTE DEVELOPER OF PHOTOSENSITIVE LITHOGRAPHIC PRINTING PLATE | FUJI PHOTO FILM CO LTD | 1994-09-30 | — | — | JP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | CA4 505/4885ALDH1A1 1586/4885HMGCR 2018/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CA4 749/4885ALDH1A1 4472/4885HMGCR 2602/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CA4 281/4885ALDH1A1 4452/4885HMGCR 3483/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA4 1681/4885ALDH1A1 1558/4885HMGCR 2061/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CA4 440/4885ALDH1A1 4150/4885HMGCR 1173/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.