Oxalic Acid

Oxalic Acid

SCHEMBL108586

O=C([O-])C(=O)O.c1ccc([I+]c2ccccc2)cc1

nearest known ligand 0.42

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

OPRM1SLC6A4

The experimentally established mechanism targets of Oxalic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.42
CA4 P22748 1/20 0.42
CES2 O00748 3/20 0.37
CES1 P23141 3/20 0.37
F2 P00734 1/20 0.37
LMNA P02545 1/20 0.37
PTPN1 P18031 2/20 0.37
ERCC5 P28715 1/20 0.37
FEN1 P39748 1/20 0.37
ALDH1A1 P00352 3/20 0.36
TSHR P16473 3/20 0.36
DAO P14920 1/20 0.36
NAPRT Q6XQN6 1/20 0.36
ALOX15 P16050 1/20 0.36
EDNRA P25101 1/20 0.35
HDAC4 P56524 2/20 0.34
HDAC3 O15379 1/20 0.34
HDAC7 Q8WUI4 1/20 0.34
HDAC8 Q9BY41 1/20 0.34
HDAC6 Q9UBN7 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Oxalic Acid SCHEMBL108407 0.92 CA4 (0.44) CA2CA4CES2CES1ALDH1A1
Bicarbonate SCHEMBL108506 0.90 CA2 (0.46) CA2CA4CES2CES1ALDH1A1
Bicarbonate SCHEMBL105149 0.90 CA2 (0.46) CA2CA4CES2CES1ALDH1A1
Acetic Acid SCHEMBL107583 0.85 CA2 (0.42) CA2CA4CES2CES1ALDH1A1
Terephthalic Acid SCHEMBL103572 0.81 CA2 (0.62) CA2CA4CES2CES1TSHR
Benzoic Acid SCHEMBL107605 0.81 CA2 (0.70) CA2CA4CES2CES1ALDH1A1
Succinic Acid SCHEMBL107086 0.81 HDAC3 (0.48) CA2CA4CES2CES1LMNA
Fumaric Acid SCHEMBL106422 0.81 CA2 (0.39) CA2CA4CES2CES1LMNA
Fumaric Acid SCHEMBL103691 0.81 CA2 (0.39) CA2CA4CES2CES1LMNA
Phthalic Acid SCHEMBL105295 0.81 ALDH1A1 (0.50) CA2CA4CES2CES1PTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 99 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12174541-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-24 US disclosed
EP-1845132-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2009-01-21 EP disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 CA2 3442/4885CA4 505/4885CES2 2501/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA CA2 1064/4885CA4 749/4885CES2 4176/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX CA2 2255/4885CA4 1589/4885CES2 2254/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 CA2 2902/4885CA4 281/4885CES2 936/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR CA2 2105/4885CA4 1681/4885CES2 2647/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 CA2 972/4885CA4 440/4885CES2 4119/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.