Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 1/20 | 0.34 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.34 |
| ▸ | CA1 | P00915 | 1/20 | 0.31 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | CA5A | P35218 | 1/20 | 0.31 |
| ▸ | CA9 | Q16790 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5416086 | 0.87 | PTPN1 (0.33) | GPR3PTPN1 | |
| SCHEMBL5169076 | 0.81 | ALDH1A1 (0.38) | CA1CA2CA9 | |
| SCHEMBL1087889 | 0.80 | GPR3 (0.34) | GPR3PTPN1CA1CA2CA5A | |
| Trifluoromethanesulfonic Acid SCHEMBL36177 | 0.80 | GPR3 (0.50) | GPR3PTPN1CA1CA2CA5A | |
| SCHEMBL51422 | 0.78 | CA2 (0.38) | GPR3PTPN1CA1CA2 | |
| SCHEMBL5168156 | 0.77 | LMNA (0.43) | — | |
| SCHEMBL213386 | 0.77 | CA2 (0.40) | GPR3PTPN1CA1CA2 | |
| SCHEMBL7708128 | 0.77 | GPR3 (0.34) | GPR3PTPN1CA1CA2CA5A | |
| SCHEMBL59303 | 0.77 | CA2 (0.40) | GPR3PTPN1CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL12613417 | 0.75 | GPR3 (0.40) | GPR3PTPN1CA1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2326744-B1 | METAL COMPOSITIONS AND METHODS OF MAKING SAME | PRYOG LLC (US) | 2022-06-01 | — | — | EP | claimed |
| US-12338309-B2 | Dielectric film-forming composition | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2025-06-24 | — | — | US | disclosed |
| US-20240254268-A1 | Dielectric Film-Forming Composition | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. | 2024-08-01 | — | — | US | disclosed |
| US-11945894-B2 | Dielectric film-forming composition | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2024-04-02 | — | — | US | disclosed |
| US-11939428-B2 | Polyimides | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2024-03-26 | — | — | US | disclosed |
| EP-4176001-A1 | DIELECTRIC FILM-FORMING COMPOSITION | FUJIFILM Electronic Materials U.S.A, Inc. (US) | 2023-05-10 | — | — | EP | disclosed |
| EP-4118679-A1 | METAL DEPOSITION PROCESSES | Fujifilm Electronic Materials U.S.A., Inc. (US) | 2023-01-18 | — | — | EP | disclosed |
| CN-115516603-A | Metal deposition method | 富士胶片电子材料美国有限公司 | 2022-12-23 | — | — | CN | disclosed |
| EP-2326744-B1 | METAL COMPOSITIONS AND METHODS OF MAKING SAME | PRYOG LLC (US) | 2022-06-01 | — | — | EP | disclosed |
| WO-2022005783-A1 | DIELECTRIC FILM-FORMING COMPOSITION | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2022-01-06 | — | — | WO | disclosed |
| US-20010036589-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | MERCK PATENT GMBH (DE) | 2001-11-01 | — | — | US | disclosed |
| EP-0827970-B1 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT FINANCE BVI LTD (VG) | 2001-09-26 | — | — | EP | disclosed |
| WO-2001022162-A2 | RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF | ARCH SPECIALTY CHEMICALS, INC. (US) | 2001-03-29 | — | — | WO | disclosed |
| WO-2001022163-A2 | RADIATION SENSITIVE COPOLYMERS, PHOTORESIST COMPOSITIONS THEREOF AND DEEP UV BILAYER SYSTEMS THEREOF | ARCH SPECIALTY CHEMICALS, INC. (US) | 2001-03-29 | — | — | WO | disclosed |
| US-6165682-A | Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof | ARCH SPECIALTY CHEMICALS, INC. (US) | 2000-12-26 | — | — | US | disclosed |
| US-6146793-A | TERPOLYMER WITH CHEMICALLY AMPLIFIED (ACID LABILE) MOIETIES AND ORGANOSILICON MOIETIES SUITABLE FOR USE AS THE BINDER RESIN FOR A PHOTOIMAGEABLE RESIST PHOTORESIST COMPOSITION SUITABLE FOR USE IN 193 NM PHOTOLITHOGRAPHIC PROCESSES. | ARCH SPECIALTY CHEMICALS, INC. (US) | 2000-11-14 | — | — | US | disclosed |
| EP-0989459-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | disclosed |
| WO-1999042903-A1 | RADIATION SENSITIVE TERPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND 193 nm BILAYER SYSTEMS | OLIN MICROELECTRONIC CHEMICALS, INC. (US) | 1999-08-26 | — | — | WO | disclosed |
| US-5852128-A | Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT AG (CH) | 1998-12-22 | — | — | US | disclosed |
| EP-0827970-A2 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | Clariant AG (CH) | 1998-03-11 | — | — | EP | disclosed |