SCHEMBL13683039

SCHEMBL13683039

CCC(C)(C)C(=O)OCCOCOc1cccc(C)c1

nearest known ligand 0.50

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.50
TDP1 Q9NUW8 1/20 0.50
SMN1; SMN2 Q16637 1/20 0.41
POLB P06746 1/20 0.41
GAA P10253 2/20 0.40
KDM4E B2RXH2 2/20 0.40
KMT2A Q03164 2/20 0.40
LMNA P02545 2/20 0.40
MAPK1 P28482 2/20 0.40
HPGD P15428 1/20 0.40
ALOX5 P09917 1/20 0.39
PPARG P37231 1/20 0.39
PPARA Q07869 1/20 0.39
MEN1 O00255 1/20 0.39
DRD2 P14416 1/20 0.39
DRD4 P21917 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683043 0.89 CHRNB2 (0.43) L3MBTL1TDP1KDM4EKMT2AMAPK1
SCHEMBL13683041 0.87 TDP1 (0.44) TDP1SMN1; SMN2KDM4EPPARGPPARA
SCHEMBL13683037 0.85 MEN1 (0.47) L3MBTL1SMN1; SMN2GAAKMT2ALMNA
SCHEMBL13683056 0.85 HDAC1 (0.46) KDM4E
SCHEMBL13683049 0.85 CYP3A4 (0.43) L3MBTL1TDP1SMN1; SMN2KDM4EKMT2A
SCHEMBL13683066 0.82 PPARG (0.47) TDP1SMN1; SMN2POLBKDM4EKMT2A
SCHEMBL13683046 0.80 CHRM2 (0.41) SMN1; SMN2LMNAMAPK1
SCHEMBL13683058 0.80 NPC1 (0.46) SMN1; SMN2LMNA
SCHEMBL13683038 0.80 L3MBTL1 (0.52) L3MBTL1TDP1SMN1; SMN2POLBGAA
SCHEMBL11306567 0.79 KDM4E (0.48) TDP1SMN1; SMN2KDM4EKMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed