SCHEMBL13683064

SCHEMBL13683064

CCC(C)(C)C(=O)OCCOCOc1cccc2ccccc12

nearest known ligand 0.45

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 6/20 0.45
ALDH1A1 P00352 6/20 0.45
HPGD P15428 3/20 0.45
TSHR P16473 1/20 0.45
TDP1 Q9NUW8 1/20 0.45
HSD17B10 Q99714 1/20 0.43
HTR1B P28222 6/20 0.42
KMT2A Q03164 3/20 0.42
MEN1 O00255 2/20 0.42
KCNA3 P22001 1/20 0.42
OGG1 O15527 1/20 0.41
USP2 O75604 1/20 0.41
POLB P06746 1/20 0.41
HTR1D P28221 2/20 0.41
ATM Q13315 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683042 0.84 GAA (0.41) KDM4EALDH1A1HPGDTDP1ATM
SCHEMBL13683036 0.84 TDP1 (0.48) KDM4EALDH1A1TDP1KMT2AMEN1
SCHEMBL13683053 0.81 PTGS2 (0.38) KDM4EALDH1A1HPGDTSHRTDP1
SCHEMBL14582691 0.81 ALDH1A1 (0.54) KDM4EALDH1A1HPGDTSHRTDP1
SCHEMBL13683041 0.80 TDP1 (0.44) KDM4ETSHRTDP1
SCHEMBL13683066 0.79 PPARG (0.47) KDM4EALDH1A1TDP1KMT2AMEN1
SCHEMBL13568054 0.78 NR2E1 (0.57) KDM4EALDH1A1TSHRTDP1HSD17B10
SCHEMBL7265465 0.77 ALDH1A1 (0.54) KDM4EALDH1A1HPGDTSHRTDP1
SCHEMBL19360473 0.77 KDM4E (0.47) KDM4EALDH1A1HPGDTDP1KMT2A
SCHEMBL29448816 0.76 KDM4E (0.54) KDM4EALDH1A1HPGDTSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed