SCHEMBL13683042

SCHEMBL13683042

CCC(C)(C)C(=O)OCCOCOc1ccccc1O

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 4/20 0.41
LMNA P02545 2/20 0.41
JAK2 O60674 1/20 0.41
MAPT P10636 1/20 0.41
CHRM2 P08172 3/20 0.36
CHRM4 P08173 3/20 0.36
CHRM1 P11229 3/20 0.36
CHRM3 P20309 3/20 0.36
CHRM5 P08912 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.35
ALDH1A1 P00352 2/20 0.35
KDM4E B2RXH2 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
PPARG P37231 1/20 0.35
PPARD Q03181 1/20 0.35
PPARA Q07869 1/20 0.35
HPGD P15428 1/20 0.35
ATM Q13315 1/20 0.35
TDP1 Q9NUW8 1/20 0.34
DRD2 P14416 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683036 0.87 TDP1 (0.48) LMNAMAPTSMN1; SMN2ALDH1A1KDM4E
SCHEMBL14582691 0.85 ALDH1A1 (0.54) LMNAMAPTCHRM2CHRM4CHRM1
SCHEMBL13683053 0.85 PTGS2 (0.38) LMNACHRM2CHRM4CHRM1CHRM3
SCHEMBL13683064 0.84 KDM4E (0.45) ALDH1A1KDM4EHPGDATMTDP1
SCHEMBL13683041 0.83 TDP1 (0.44) CHRM2CHRM4CHRM1CHRM3CHRM5
SCHEMBL13683046 0.80 CHRM2 (0.41) LMNACHRM2CHRM4CHRM1CHRM3
SCHEMBL13683058 0.79 NPC1 (0.46) LMNAMAPTSMN1; SMN2
SCHEMBL13212295 0.78 ELANE (0.45) GAALMNAJAK2MAPTALDH1A1
SCHEMBL13683043 0.78 CHRNB2 (0.43) ALDH1A1KDM4EL3MBTL1TDP1DRD2
SCHEMBL18219828 0.78 KDM4E (0.48) LMNAMAPTSMN1; SMN2ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed