Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA | P10253 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18470418 | 0.82 | TSHR (0.35) | — | |
| SCHEMBL11991286 | 0.81 | — | — | |
| SCHEMBL13829024 | 0.81 | — | — | |
| SCHEMBL13829081 | 0.81 | — | — | |
| SCHEMBL22861883 | 0.80 | — | — | |
| SCHEMBL18195976 | 0.78 | GAA (0.36) | GAA | |
| SCHEMBL20009269 | 0.78 | ALDH1A1 (0.38) | — | |
| SCHEMBL21504752 | 0.78 | TSHR (0.30) | — | |
| SCHEMBL16487728 | 0.78 | MMP1 (0.33) | — | |
| SCHEMBL6366777 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 128 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914291-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027903-A1 | Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-11835860-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11829067-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9122155-B2 | Sulfonium salt, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9122155-B2 | Sulfonium salt, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-8956803-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8956803-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20120288796-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | GAA 4226/4885 |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, MIF | GAA 3895/4885 |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | CA2, CASR, CECR2 | GAA 4601/4885 |
| US-20240027903-A1 | Resist Material And Patterning Process | LBR, HNRNPU, EWSR1 | GAA 3050/4885 |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | PAG1, PARG, PAH | GAA 681/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.