SCHEMBL1410180

SCHEMBL1410180

CCC1(OC(=O)C2CC3C=CC2C3)CCCCC1

nearest known ligand 0.40

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.40
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 9/20 0.37
HPGD P15428 1/20 0.37
POLB P06746 3/20 0.37
KMT2A Q03164 2/20 0.37
RAB9A P51151 1/20 0.36
APEX1 P27695 1/20 0.35
RECQL P46063 1/20 0.35
BLM P54132 1/20 0.35
ESR2 Q92731 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
MAPK1 P28482 2/20 0.34
MAPT P10636 1/20 0.34
HSD11B1 P28845 2/20 0.32
THRB P10828 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22263664 1.00 LMNA (0.40) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL13409255 1.00 LMNA (0.40) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL3434470 0.99 LMNA (0.41) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL7269169 0.93 LMNA (0.37) LMNAKDM4EALDH1A1HPGDPOLB
Maleic Anhydride SCHEMBL7262306 0.89 ALDH1A1 (0.34) LMNAKDM4EALDH1A1HPGDPOLB
Maleic Anhydride SCHEMBL7262875 0.88 ALDH1A1 (0.35) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL22263835 0.87 ALDH1A1 (0.44) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL6276583 0.87 ALDH1A1 (0.34) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL22344717 0.86 LMNA (0.38) LMNAKDM4EALDH1A1HPGDPOLB
SCHEMBL11909235 0.86 ALDH1A1 (0.45) LMNAKDM4EALDH1A1HPGDPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11886119-B2 Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2024-01-30 US disclosed
CN-110709774-B Underlayer film forming material, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2023-12-08 CN disclosed
US-20230185195-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2023-06-15 US disclosed
US-11599025-B2 Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2023-03-07 US disclosed
US-20200264511-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-08-20 US disclosed
EP-3693793-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR PRODUCING RESIST UNDERLAYER FILM, AND LAYERED PRODUCT Mitsui Chemicals, Inc. (JP) 2020-08-12 EP disclosed
US-20200241419-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-07-30 US disclosed
CN-111183395-A Resin material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2020-05-19 CN disclosed
CN-110709774-A Material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2020-01-17 CN disclosed
US-8753790-B2 Self-imageable film forming polymer, compositions thereof and devices and structures made therefrom PROMERUS, LLC (US) 2014-06-17 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
EP-1679314-A1 SILANE COMPOUND, POLYSILOXANE AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2006-07-12 EP disclosed
EP-1557718-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-07-27 EP disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-6653044-B2 Addition copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-25 US disclosed
US-6492542-B2 CONTINUALLY ADDING AN ESTERIFICATION AGENT POSSESSING A MONOVALENT ACID GROUP, WHICH AGENT IS ESTER-INTERCHANGEABLE WITH A TERTIARY ALCOHOL, TO A MIXED FLUID OF A CARBOXYLIC ACID AND A TERTIARY ALCOHOL HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2002-12-10 US disclosed
US-20020055649-A1 Method for producing carboxylic acid tertiary alkyl ester HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2002-05-09 US disclosed
EP-1182188-A2 Method for producing carboxylic acid tertiary alkyl ester Honshu Chemical Industry Co., Ltd. (JP) 2002-02-27 EP disclosed
US-20010036593-A1 Chemical amplification type resist composition SHIN-ETSU CHEMICAL CO., LTD. 2001-11-01 US disclosed
EP-1117003-A1 Chemical amplification type resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2001-07-18 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020055649-A1 Method for producing carboxylic acid tertiary alkyl ester ADH1A, ADH1C, ADH5 LMNA 3672/4885KDM4E 3606/4885ALDH1A1 5/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.