SCHEMBL1452863

SCHEMBL1452863

CCCC(C)(C)Oc1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.39
CA4 P22748 1/20 0.37
RIPK1 Q13546 1/20 0.36
SLC6A2 P23975 1/20 0.35
TAAR1 Q96RJ0 1/20 0.35
PPARG P37231 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
CHRNB2 P17787 1/20 0.34
CHRNB4 P30926 1/20 0.34
CHRNA3 P32297 1/20 0.34
CHRNA7 P36544 1/20 0.34
CHRNA4 P43681 1/20 0.34
PPARA Q07869 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28141859 0.89 CA4 (0.42) LTA4HCA4RIPK1SLC6A2TAAR1
SCHEMBL4980283 0.89 ELANE (0.39) LTA4HPPARGTSHRPPARA
SCHEMBL1454708 0.88 LTA4H (0.46) LTA4HSLC6A2PPARGKCNA3PPARA
SCHEMBL29068796 0.87 LTA4H (0.39) LTA4HCA4RIPK1SLC6A2TAAR1
SCHEMBL1454452 0.86 LTA4H (0.46) LTA4HSLC6A2PPARGPPARA
SCHEMBL5280435 0.86 LTA4H (0.36) LTA4HCA4SLC6A2TAAR1NPSR1
SCHEMBL11659680 0.85 PPARA (0.39) PPARGTSHRPPARA
SCHEMBL183720 0.82 LTA4H (0.40) LTA4HCA4RIPK1SLC6A2TAAR1
SCHEMBL11613159 0.81 CA4 (0.36) LTA4HCA4RIPK1SLC6A2TAAR1
SCHEMBL46390 0.81 ALDH1A1 (0.43) LTA4HCA4RIPK1SLC6A2TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-9627204-B2 Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-18 US disclosed
US-9624356-B2 Ultraviolet absorber, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMIAL CO., LTD (JP) 2017-04-18 US disclosed
US-9624356-B2 Ultraviolet absorber, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMIAL CO., LTD (JP) 2017-04-18 US disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130137041-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-30 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-7910617-B2 Method for suppressing the number of peripheral blood lymphocytes using an amino alcohol compound SANKYO COMPANY, LIMITED (JP) 2011-03-22 US disclosed
US-7300742-B2 Data storage medium and method for the preparation thereof GENERAL ELECTRIC COMPANY (US) 2007-11-27 US disclosed
US-20070191468-A1 Amino alcohol compound DAIICHI SANKYO COMPANY, LIMITED (JP) 2007-08-16 US disclosed
EP-1733724-A1 AMINO ALCOHOL COMPOUND Sankyo Company, Limited (JP) 2006-12-20 EP disclosed
US-4428889-A PREPARING THIOPEPTIDES FROM PEPTIDES BRISTOL-MYERS COMPANY (US) 1984-01-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070191468-A1 Amino alcohol compound ADH1A, ADH1C, BCAT1 LTA4H 2143/4885CA4 3795/4885RIPK1 4689/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.