Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2C9 | P11712 | 1/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.42 |
| ▸ | ALOX5 | P09917 | 3/20 | 0.37 |
| ▸ | ELANE | P08246 | 1/20 | 0.37 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.36 |
| ▸ | HDAC1 | Q13547 | 2/20 | 0.36 |
| ▸ | HDAC6 | Q9UBN7 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.36 |
| ▸ | CA12 | O43570 | 2/20 | 0.36 |
| ▸ | CA1 | P00915 | 2/20 | 0.36 |
| ▸ | CA2 | P00918 | 2/20 | 0.36 |
| ▸ | CA7 | P43166 | 2/20 | 0.36 |
| ▸ | CA9 | Q16790 | 2/20 | 0.36 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.36 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.36 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.36 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.36 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.36 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13823922 | 0.88 | ALOX5 (0.47) | ALOX5SLC1A3SLC1A2SLC1A1 | |
| SCHEMBL12123084 | 0.88 | PPARG (0.39) | ALOX5ELANEHDAC1HDAC6CA12 | |
| SCHEMBL26444367 | 0.87 | ALOX5 (0.44) | ALOX5SLC1A3SLC1A2SLC1A1 | |
| SCHEMBL18898017 | 0.86 | CYP2C9 (0.40) | CYP2C9HSD17B10ALOX5ELANEEPHX2 | |
| SCHEMBL2742136 | 0.84 | MEN1 (0.50) | ELANEMEN1KMT2ACA12CA1 | |
| SCHEMBL15294398 | 0.82 | TRPA1 (0.46) | HSD17B10MEN1KMT2ACA12CA1 | |
| SCHEMBL119862 | 0.80 | ESR1 (0.48) | CYP2C9HSD17B10ELANEMEN1KMT2A | |
| SCHEMBL12895343 | 0.79 | NPC1 (0.42) | CYP2C9HSD17B10MEN1KMT2A | |
| SCHEMBL16994292 | 0.79 | PPARA (0.41) | CYP2C9HSD17B10MEN1KMT2AHCAR2 | |
| SCHEMBL26444355 | 0.78 | MEN1 (0.39) | ALOX5MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20170371241-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-28 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9513547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-06 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160004155-A1 | PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-07 | — | — | US | disclosed |
| US-9223205-B2 | Acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20140248556-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-09-04 | — | — | US | disclosed |
| US-20140227637-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20140227637-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20140162189-A1 | SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20130236832-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-12 | — | — | US | disclosed |
| US-20130224657-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224659-A1 | POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224660-A1 | PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| WO-2013062133-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-05-02 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170371241-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RB1, CHD1, SMARCA1 | CYP2C9 3424/4885HSD17B10 2249/4885ALOX5 2193/4885 |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, INSR | CYP2C9 3708/4885HSD17B10 2745/4885ALOX5 446/4885 |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, NHERF1, MIF | CYP2C9 3479/4885HSD17B10 3164/4885ALOX5 720/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.