SCHEMBL1595059

SCHEMBL1595059

O=S(=O)(O)C(F)(F)C(F)(F)OCc1ccc2ccccc2c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RORC P51449 1/20 0.41
RAB9A P51151 2/20 0.40
SLC1A3 P43003 1/20 0.40
SLC1A2 P43004 1/20 0.40
SLC1A1 P43005 1/20 0.40
PTPN1 P18031 2/20 0.39
NPY1R P25929 1/20 0.38
NPY5R Q15761 1/20 0.38
CYP1A2 P05177 2/20 0.38
NPC1 O15118 1/20 0.38
GAA P10253 1/20 0.38
MAPT P10636 1/20 0.38
XBP1 P17861 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
CYP2A6 P11509 1/20 0.38
CNR1 P21554 1/20 0.37
CNR2 P34972 1/20 0.37
ALOX5 P09917 4/20 0.37
SLC6A2 P23975 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10083976 0.92 RORC (0.40) RORCRAB9ASLC1A3SLC1A2SLC1A1
SCHEMBL3289610 0.87 RORC (0.42) RORCRAB9ASLC1A3SLC1A2SLC1A1
SCHEMBL12968558 0.85 RORC (0.43) RORCRAB9ASLC1A3SLC1A2SLC1A1
Lithium Ion SCHEMBL2994019 0.84 RORC (0.43) RORCRAB9ASLC1A3SLC1A2SLC1A1
SCHEMBL14228001 0.83 KMT2A (0.40) PTPN1
SCHEMBL1595055 0.83 RORC (0.43) RORCRAB9ASLC1A3SLC1A2SLC1A1
SCHEMBL10083977 0.82 PTPN1 (0.42) RORCPTPN1TDP1SLC6A2SLC6A3
SCHEMBL10267882 0.80 CYP1A2 (0.43) RORCRAB9ASLC1A3SLC1A2SLC1A1
SCHEMBL15935643 0.80 RORC (0.41) RORCRAB9ASLC1A3SLC1A2SLC1A1
SCHEMBL2392983 0.78 RORC (0.39) RORCRAB9ASLC1A3SLC1A2SLC1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 164 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10324374-B2 Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, electronic device and novel compound FUJIFILM CORPORATION (JP) 2019-06-18 US disclosed
US-10011576-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound FUJIFILM CORPORATION (JP) 2018-07-03 US disclosed
US-10007180-B2 Negative resist composition, resist film using same, pattern forming method, and mask blank provided with resist film FUJIFILM CORPORATION (JP) 2018-06-26 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
US-9880472-B2 Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same FUJIFILM CORPORATION (JP) 2018-01-30 US disclosed
EP-2891014-B1 PATTERN FORMING METHOD, AND ELECTRONIC DEVICE PRODUCING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-11-29 EP disclosed
US-20170168395-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-15 US disclosed
US-20170168395-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-15 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-20090098484-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20090098484-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20090068590-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 US disclosed
US-20090061356-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-05 US disclosed
US-20090061356-A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-05 US disclosed
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 RORC 1812/4885RAB9A 91/4885SLC1A3 2316/4885
US-10011576-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound RARA, RXRA, RARG RORC 987/4885RAB9A 237/4885SLC1A3 2809/4885
US-20090042131-A1 acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group ADH1A, F12, DDAH1 RORC 4134/4885RAB9A 1570/4885SLC1A3 1412/4885
US-10324374-B2 Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, electronic device and novel compound ERCC1, RER1, ECPAS RORC 3607/4885RAB9A 390/4885SLC1A3 3434/4885
US-20090023095-A1 NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN C1R, CYP1B1, C1S RORC 3119/4885RAB9A 1057/4885SLC1A3 2496/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.