SCHEMBL1655759

SCHEMBL1655759

O=S(=O)(O)C(F)(F)C(F)(F)CCO

nearest known ligand 0.33

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1929858 0.98 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL30184986 0.98 ALDH1A1 (0.32) ALDH1A1L3MBTL1
SCHEMBL247089 0.86
SCHEMBL2759436 0.86 ATR (0.32) ALDH1A1L3MBTL1
SCHEMBL16546889 0.84
SCHEMBL2759433 0.84 CYP4F2 (0.32) ALDH1A1L3MBTL1
SCHEMBL2759437 0.82 CYP4F2 (0.32)
SCHEMBL2759439 0.82 CYP4F2 (0.32)
SCHEMBL2759427 0.82 CYP4F2 (0.32)
SCHEMBL1771740 0.82 CYP4F2 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 118 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12547072-B2 Self-aligned build-up processing GEMINATIO, INC. (US) 2026-02-10 US disclosed
US-20250336673-A1 METHODS FOR SUBSTRATE PATTERNING PROCESS TOKYO ELECTRON LTD (JP) 2025-10-30 US disclosed
US-20250314968-A1 SELF-ALIGNED DOUBLE PATTERNING USING METAL-BASED RESIST TOKYO ELECTRON LTD (JP) 2025-10-09 US disclosed
US-20250314969-A1 SELF-ALIGNED DOUBLE PATTERNING USING METAL-BASED RESIST TOKYO ELECTRON LTD (JP) 2025-10-09 US disclosed
US-12386261-B2 In-resist process for high density contact formation GEMINATIO, INC. (US) 2025-08-12 US disclosed
US-20250233019-A1 MULTI-LEVEL SELECTIVE PATTERNING FOR STACKED DEVICE CREATION GEMINATIO, INC. (US) 2025-07-17 US disclosed
US-20250216784-A1 IN-RESIST PROCESS FOR HIGH DENSITY CONTACT FORMATION GEMINATIO, INC. (US) 2025-07-03 US disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216790-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC., 2025-07-03 US disclosed
US-20250218775-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC. 2025-07-03 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed
US-7956142-B2 Polymerizable sulfonic acid onium salt and resin JSR CORPORATION (JP) 2011-06-07 US disclosed
US-7928262-B2 Onium salts, oxime sulfonates and sulfonyloxyimides derived from these sulfonium salts are effective photoacid generators in chemically amplified resist compositions; sensitive to high-energy radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-19 US disclosed
US-7928262-B2 Onium salts, oxime sulfonates and sulfonyloxyimides derived from these sulfonium salts are effective photoacid generators in chemically amplified resist compositions; sensitive to high-energy radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-19 US disclosed
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR CORPORATION (JP) 2010-03-11 US disclosed
US-20100040977-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-18 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN ASIC1, RER1, RPS10 ALDH1A1 2200/4885L3MBTL1 1692/4885
US-12547072-B2 Self-aligned build-up processing MYBBP1A, SMURF1, MYB ALDH1A1 3094/4885L3MBTL1 821/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST ALDH1A1 2781/4885L3MBTL1 4521/4885
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST ALDH1A1 2781/4885L3MBTL1 4521/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.