SCHEMBL1709986

SCHEMBL1709986

Cc1ccc(SC(C)c2ccccc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 6/20 0.50
SMN1; SMN2 Q16637 4/20 0.50
TSHR P16473 3/20 0.50
MAPK1 P28482 1/20 0.50
DAO P14920 1/20 0.45
KMT2A Q03164 4/20 0.44
LMNA P02545 4/20 0.41
MEN1 O00255 2/20 0.41
POLB P06746 2/20 0.41
MAPT P10636 3/20 0.40
TDP1 Q9NUW8 2/20 0.40
HKDC1 Q2TB90 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40
ALOX12 P18054 1/20 0.40
ACHE P22303 1/20 0.40
ALDH1A1 P00352 3/20 0.40
HPGD P15428 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29700321 1.00 L3MBTL1 (0.50) L3MBTL1SMN1; SMN2TSHRMAPK1DAO
SCHEMBL11370239 0.87 L3MBTL1 (0.50) L3MBTL1SMN1; SMN2DAOKMT2ALMNA
SCHEMBL27739051 0.86 L3MBTL1 (0.43) L3MBTL1SMN1; SMN2TSHRMAPK1DAO
SCHEMBL10234307 0.83 SLC6A4 (0.47) L3MBTL1SMN1; SMN2TSHRMAPK1DAO
SCHEMBL10234305 0.82 DAO (0.51) L3MBTL1SMN1; SMN2DAOKMT2ALMNA
SCHEMBL27862715 0.79 ALDH1A1 (0.50) L3MBTL1SMN1; SMN2DAOKMT2ALMNA
SCHEMBL13146781 0.79 DAO (0.42) L3MBTL1TSHRDAOKMT2ALMNA
SCHEMBL754525 0.78 L3MBTL1 (0.40) L3MBTL1SMN1; SMN2TSHRMAPK1KMT2A
SCHEMBL11205708 0.77 DAO (0.48) L3MBTL1SMN1; SMN2MAPK1DAOLMNA
SCHEMBL11205710 0.77 ALDH1A1 (0.47) L3MBTL1SMN1; SMN2TSHRMAPK1DAO

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112174862-B Synthesis method of benzyl sulfide 成都理工大学 2022-07-12 CN disclosed
US-11181820-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-11-23 US disclosed
US-10705428-B2 Organic processing liquid for patterning chemical amplification resist film, container for organic processing liquid for patterning chemical amplification resist film, and pattern forming method, method of manufacturing electronic device, and electronic device using the same FUJIFILM CORPORATION (JP) 2020-07-07 US disclosed
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2019-04-02 US disclosed
US-10234759-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern FUJIFILM CORPORATION (JP) 2019-03-19 US disclosed
US-20180120697-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION FILM USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9651863-B2 Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-05-16 US disclosed
US-9523912-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, electronic device and compound FUJIFILM CORPORATION (JP) 2016-12-20 US disclosed
US-20160147156-A1 PATTERN FORMATION METHOD, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 US disclosed
US-20160077440-A1 PATTERN PEELING METHOD, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJIFILM CORPORATION (JP) 2016-03-17 US disclosed
US-20160070167-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND FUJIFILM CORPORATION (JP) 2016-03-10 US disclosed
US-20160070174-A1 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-03-10 US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 US disclosed
US-8557499-B2 Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2013-10-15 US disclosed
WO-2012047686-A1 HYDROTHIOLATION OF UNACTIVATED ALKENES TRUSTEES OF DARTMOUTH COLLEGE (US) 2012-04-12 WO disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-06-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10234759-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern AFF1, MACF1, RER1 L3MBTL1 2779/4885SMN1; SMN2 910/4885TSHR 259/4885
US-20110159433-A1 PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION SUN2, LCP1, PHYKPL L3MBTL1 4764/4885SMN1; SMN2 4547/4885TSHR 4097/4885
US-20160070167-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND RER1, TERB1, RXRA L3MBTL1 4417/4885SMN1; SMN2 3397/4885TSHR 2196/4885
US-10248019-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film ACTR3, RXRA, RARA L3MBTL1 4154/4885SMN1; SMN2 2331/4885TSHR 3293/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.