Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | UBE2D3 | P61077 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15147160 | 1.00 | UBE2D3 (0.31) | UBE2D3 | |
| SCHEMBL11989123 | 0.81 | MGAM (0.31) | UBE2D3 | |
| SCHEMBL22201021 | 0.73 | — | — | |
| SCHEMBL19052044 | 0.70 | PPARG (0.33) | — | |
| SCHEMBL18845155 | 0.69 | — | — | |
| SCHEMBL16743494 | 0.64 | MAPT (0.31) | — | |
| SCHEMBL18022193 | 0.64 | MAPT (0.31) | — | |
| SCHEMBL18872442 | 0.64 | MAPT (0.31) | — | |
| SCHEMBL13057396 | 0.64 | MAPT (0.31) | — | |
| SCHEMBL19249994 | 0.64 | MAPT (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-20230273519-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-11693314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20160299431-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299431-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299428-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION USING NOVEL ONIUM SALT AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160299430-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-10-13 | — | — | US | disclosed |
| US-20160246175-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-25 | — | — | US | disclosed |
| US-20160246175-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-25 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160179002-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-23 | — | — | US | disclosed |
| US-20160179002-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160179002-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1C, ADH1A, ADH5 | UBE2D3 3425/4885 |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-2 | UBE2D3 255/4885 |
| US-11773059-B2 | Onium salt, chemically amplified negative resist composition, and pattern forming process | LBR, IDUA, ADORA1 | UBE2D3 4625/4885 |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | UBE2D3 1547/4885 |
| US-11693314-B2 | Resist composition and patterning process | EIF2B1, EIF2B5, EIF2B3 | UBE2D3 1547/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | UBE2D3 4177/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.