Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LTA4H | P09960 | 2/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 2/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.38 |
| ▸ | NSD2 | O96028 | 1/20 | 0.38 |
| ▸ | POLB | P06746 | 1/20 | 0.38 |
| ▸ | GRK2 | P25098 | 1/20 | 0.38 |
| ▸ | CASP6 | P55212 | 1/20 | 0.38 |
| ▸ | CTDSP1 | Q9GZU7 | 1/20 | 0.38 |
| ▸ | AOC2 | O75106 | 3/20 | 0.37 |
| ▸ | GPR119 | Q8TDV5 | 1/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.36 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.36 |
| ▸ | RAB9A | P51151 | 1/20 | 0.36 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | PKM | P14618 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL38122 | 0.84 | PPARA (0.42) | ALDH1A1KDM4EGAAMAPTMAPK1 | |
| SCHEMBL38121 | 0.84 | PPARA (0.42) | ALDH1A1KDM4EGAAMAPTMAPK1 | |
| SCHEMBL28312030 | 0.77 | RAB9A (0.45) | ALDH1A1MEN1KMT2APOLBKDM4E | |
| SCHEMBL4085456 | 0.74 | NAMPT (0.46) | KDM4ERAB9APKM | |
| SCHEMBL27257857 | 0.74 | KLK5 (0.45) | ALDH1A1KMT2A | |
| SCHEMBL13123351 | 0.72 | RAB9A (0.47) | ALDH1A1POLBKDM4EGAAMAPT | |
| SCHEMBL29126042 | 0.71 | CTSK (0.41) | ALDH1A1MEN1KMT2AGAAMAPT | |
| SCHEMBL13108597 | 0.71 | KDM4E (0.41) | ALDH1A1KDM4EGAAMAPTMAPK1 | |
| SCHEMBL28611674 | 0.70 | LMNA (0.41) | ALDH1A1MEN1KMT2APOLBKDM4E | |
| SCHEMBL20238613 | 0.70 | LTA4H (0.60) | LTA4HALDH1A1MEN1KMT2ANSD2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240142876-A1 | SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2024-05-02 | — | — | US | disclosed |
| US-20240105451-A1 | SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2024-03-28 | — | — | US | disclosed |
| WO-2023199881-A1 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND RESIST UNDERLAYER FILM FORMING COMPOSITION | JSR株式会社 | 2023-10-19 | — | — | WO | disclosed |
| CN-111562720-B | Photo-sensitized chemically amplified resist material, pattern forming method, semiconductor device, mask for lithography, and template for nanoimprint | 东京毅力科创株式会社 | 2023-09-29 | — | — | CN | disclosed |
| WO-2022259885-A1 | SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR株式会社 | 2022-12-15 | — | — | WO | disclosed |
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| CN-111562720-A | Photosensitizing chemically amplified resist material, method for forming pattern, semiconductor device, mask for lithography, and template for nanoimprint | 东京毅力科创株式会社 | 2020-08-21 | — | — | CN | disclosed |
| US-10073348-B2 | Resist-pattern-forming method and chemically amplified resist material | OSAKA UNIVERSITY (JP) | 2018-09-11 | — | — | US | disclosed |
| US-10073349-B2 | Chemically amplified resist material, pattern-forming method, compound, and production method of compound | OSAKA UNIVERSITY (JP) | 2018-09-11 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9989849-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170131634-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131633-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| EP-3109703-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | Tokyo Electron Limited (JP) | 2016-12-28 | — | — | EP | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10073348-B2 | Resist-pattern-forming method and chemically amplified resist material | XRCC6, XRCC5, BLM | LTA4H 3364/4885ALDH1A1 3374/4885MEN1 627/4885 |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | LTA4H 711/4885ALDH1A1 1963/4885MEN1 847/4885 |
| US-10073349-B2 | Chemically amplified resist material, pattern-forming method, compound, and production method of compound | RER1, POLR1A, FEM1B | LTA4H 2083/4885ALDH1A1 1044/4885MEN1 742/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | LTA4H 3691/4885ALDH1A1 2183/4885MEN1 455/4885 |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | RER1, POLR1A, FEM1B | LTA4H 2083/4885ALDH1A1 1044/4885MEN1 742/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.