SCHEMBL18623947

SCHEMBL18623947

Oc1ccc(-c2ccc(O)c(C(c3ccc(C(c4cc(-c5ccc(O)cc5)ccc4O)c4cc(-c5ccc(O)cc5)ccc4O)cc3)c3cc(-c4ccc(O)cc4)ccc3O)c2)cc1

nearest known ligand 0.55

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 1/20 0.54
ESR1 P03372 10/20 0.45
MEN1 O00255 1/20 0.45
KMT2A Q03164 1/20 0.45
ESR2 Q92731 9/20 0.44
HSD17B1 P14061 1/20 0.42
HSD17B2 P37059 1/20 0.42
ABL1 P00519 1/20 0.41
ABCB1 P08183 1/20 0.41
BCR P11274 1/20 0.41
MGLL Q99685 1/20 0.41
CYP17A1 P05093 1/20 0.40
CYP3A4 P08684 1/20 0.40
CYP19A1 P11511 1/20 0.40
CYP11B1 P15538 1/20 0.40
CYP11B2 P19099 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18380942 1.00 ALOX5 (0.54) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL22316997 1.00 ALOX5 (0.54) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL19864010 0.93 MMP3 (0.52) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL18381164 0.93 MMP3 (0.52) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL22317289 0.91 ALOX5 (0.46) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL21241671 0.91 ALOX5 (0.46) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL19986224 0.91 ALOX5 (0.46) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL19842186 0.91 ALOX5 (0.48) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL18381150 0.88 ESR1 (0.48) ALOX5ESR1MEN1KMT2AESR2
SCHEMBL18637069 0.88 ESR1 (0.48) ALOX5ESR1MEN1KMT2AESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022176571-A1 RESIN, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR REFINING RESIN 三菱瓦斯化学株式会社 2022-08-25 WO disclosed
US-11067889-B2 Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-07-20 US disclosed
US-10550068-B2 Compound and method for producing same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-02-04 US disclosed
US-10303055-B2 Resist composition and method for forming resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-05-28 US disclosed
US-10294183-B2 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-05-21 US disclosed
US-20180201570-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-19 US disclosed
US-20180201570-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-19 US disclosed
EP-3345889-A1 COMPOUND AND METHOD FOR PRODUCING SAME, COMPOSITION, COMPOSITION FOR FORMING OPTICAL COMPONENT, COMPOSITION FOR FORMING LITHOGRAPHY FILM, RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, RADIATION-SENSITIVE COMPOSITION, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR PRODUCING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-07-11 EP disclosed
EP-3327505-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME Mitsubishi Gas Chemical Company, Inc. (JP) 2018-05-30 EP disclosed
US-20170075220-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-03-16 US disclosed
US-20170075220-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-03-16 US disclosed
US-20170073288-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-03-16 US disclosed
US-20170073288-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-03-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10303055-B2 Resist composition and method for forming resist pattern HEATR1, ABCC1, HEATR6 ALOX5 645/4885ESR1 1708/4885MEN1 3775/4885
US-20170073288-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN PRDM9, EBPL, CDH1 ALOX5 61/4885ESR1 447/4885MEN1 3943/4885
US-11067889-B2 Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method C5, C9, PRMT9 ALOX5 1088/4885ESR1 1606/4885MEN1 146/4885
US-10550068-B2 Compound and method for producing same C5, CBR1, MTR ALOX5 356/4885ESR1 2037/4885MEN1 785/4885
US-10294183-B2 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin PRDM9, EBPL, CDH1 ALOX5 61/4885ESR1 447/4885MEN1 3943/4885
US-20180201570-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME C5, CBR3, CBR1 ALOX5 531/4885ESR1 2141/4885MEN1 1294/4885
US-20170075220-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN HEATR1, ABCC1, HEATR6 ALOX5 645/4885ESR1 1708/4885MEN1 3775/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.