SCHEMBL1968488

SCHEMBL1968488

CCOc1ccccc1C[Si](OC)(OC)OC

nearest known ligand 0.53

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 6/20 0.53
MAPT P10636 3/20 0.53
NPSR1 Q6W5P4 1/20 0.53
ALDH1A1 P00352 5/20 0.46
ATM Q13315 2/20 0.44
POLB P06746 1/20 0.44
MEN1 O00255 1/20 0.44
GAA P10253 1/20 0.44
THRB P10828 1/20 0.44
RECQL P46063 1/20 0.44
BLM P54132 1/20 0.44
KMT2A Q03164 1/20 0.44
PLEC Q15149 1/20 0.44
TDP1 Q9NUW8 1/20 0.44
MAPK1 P28482 1/20 0.43
GLA P06280 1/20 0.41
TSHR P16473 2/20 0.40
TP53 P04637 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1971325 0.85 L3MBTL1 (0.53) L3MBTL1MAPTNPSR1ALDH1A1ATM
SCHEMBL1972978 0.82 IDO1 (0.52) L3MBTL1MAPTALDH1A1MEN1GAA
SCHEMBL83268 0.80 IDO1 (0.35) L3MBTL1MAPTALDH1A1ATMGAA
SCHEMBL1969960 0.79 L3MBTL1 (0.55) L3MBTL1MAPTNPSR1ALDH1A1ATM
SCHEMBL1970303 0.78 L3MBTL1 (0.50) L3MBTL1MAPTNPSR1ALDH1A1ATM
SCHEMBL1971094 0.76 SLC6A2 (0.40) MAPTNPSR1ALDH1A1POLBMEN1
SCHEMBL1970657 0.76 RIPK1 (0.35) MAPTALDH1A1ATMMEN1GAA
SCHEMBL128857 0.76 L3MBTL1 (0.60) L3MBTL1MAPTNPSR1ALDH1A1ATM
SCHEMBL5254664 0.76 L3MBTL1 (0.64) L3MBTL1MAPTNPSR1ALDH1A1ATM
SCHEMBL31054 0.76 L3MBTL1 (0.84) L3MBTL1MAPTNPSR1ALDH1A1ATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-8877425-B2 Silicon-containing resist underlayer film forming composition having fluorine-based additive NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-11-04 US disclosed
US-8864894-B2 Resist underlayer film forming composition containing silicone having onium group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-10-21 US disclosed
US-8828879-B2 Silicon-containing composition having sulfonamide group for forming resist underlayer film NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-09 US disclosed
EP-2479615-B1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL IND LTD (JP) 2014-04-23 EP disclosed
US-20130224957-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-08-29 US disclosed
US-20130183830-A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-18 US disclosed
EP-2479615-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2012-07-25 EP disclosed
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-07-12 US disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-06-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 L3MBTL1 1431/4885MAPT 965/4885NPSR1 4349/4885
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP SRR, KDM2B, MSR1 L3MBTL1 1038/4885MAPT 3963/4885NPSR1 2564/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L L3MBTL1 809/4885MAPT 4790/4885NPSR1 3526/4885
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM STS, SI, MUS81 L3MBTL1 3095/4885MAPT 2484/4885NPSR1 3328/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR L3MBTL1 282/4885MAPT 3056/4885NPSR1 373/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.