SCHEMBL1973019

SCHEMBL1973019

CC(C)(C)Oc1ccccc1C[Si](Cl)(Cl)Cl

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RIPK1 Q13546 2/20 0.37
KCNH2 Q12809 1/20 0.36
MAPT P10636 2/20 0.34
ALDH1A1 P00352 1/20 0.34
GAA P10253 1/20 0.34
IDO1 P14902 2/20 0.32
TAAR1 Q96RJ0 1/20 0.32
SLC6A4 P31645 5/20 0.32
SLC6A2 P23975 4/20 0.32
SLC6A3 Q01959 3/20 0.32
CHRM2 P08172 1/20 0.32
CHRM1 P11229 1/20 0.32
KCNN3 Q9UGI6 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
HTR2A P28223 2/20 0.30
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30
CA12 O43570 1/20 0.30
CA1 P00915 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1970657 0.81 RIPK1 (0.35) RIPK1KCNH2MAPTALDH1A1GAA
SCHEMBL1969650 0.80 ALDH1A1 (0.53) MAPTALDH1A1GAAIDO1TAAR1
SCHEMBL18539402 0.79 RIPK1 (0.41) RIPK1KCNH2IDO1TAAR1SLC6A4
SCHEMBL1970120 0.79 MAPT (0.34) RIPK1KCNH2MAPTALDH1A1NPSR1
SCHEMBL3361480 0.78 RIPK1 (0.40) RIPK1KCNH2MAPTALDH1A1GAA
SCHEMBL12056288 0.78 L3MBTL1 (0.50) RIPK1MAPTSLC6A4SLC6A2SLC6A3
SCHEMBL1969960 0.77 L3MBTL1 (0.55) MAPTALDH1A1GAANPSR1L3MBTL1
SCHEMBL8053486 0.76 RIPK1 (0.39) RIPK1KCNH2MAPTALDH1A1GAA
SCHEMBL14667220 0.76 RIPK1 (0.61) RIPK1KCNH2MAPTALDH1A1GAA
SCHEMBL2912005 0.76 PNMT (0.45) RIPK1KCNH2MAPTALDH1A1GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-12339586-B2 Photocurable resin composition containing self-crosslinkable polymer NISSAN CHEMICAL CORPORATION (JP) 2025-06-24 US disclosed
US-8877425-B2 Silicon-containing resist underlayer film forming composition having fluorine-based additive NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-11-04 US disclosed
US-8864894-B2 Resist underlayer film forming composition containing silicone having onium group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-10-21 US disclosed
US-8828879-B2 Silicon-containing composition having sulfonamide group for forming resist underlayer film NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-09 US disclosed
EP-2479615-B1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL IND LTD (JP) 2014-04-23 EP disclosed
US-20130224957-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-08-29 US disclosed
US-20130183830-A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-18 US disclosed
EP-2479615-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2012-07-25 EP disclosed
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-07-12 US disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-06-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 RIPK1 400/4885KCNH2 428/4885MAPT 965/4885
US-20110143149-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP SRR, KDM2B, MSR1 RIPK1 934/4885KCNH2 1014/4885MAPT 3963/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L RIPK1 262/4885KCNH2 879/4885MAPT 4790/4885
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM STS, SI, MUS81 RIPK1 1359/4885KCNH2 2253/4885MAPT 2484/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.