Known targets — ChEMBL curated mechanism
ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KEAP1 | Q14145 | 1/20 | 0.39 |
| ▸ | PTGS2 | P35354 | 7/20 | 0.39 |
| ▸ | CA12 | O43570 | 4/20 | 0.36 |
| ▸ | CA2 | P00918 | 4/20 | 0.36 |
| ▸ | CA9 | Q16790 | 4/20 | 0.36 |
| ▸ | HTR6 | P50406 | 1/20 | 0.36 |
| ▸ | PSIP1 | O75475 | 1/20 | 0.36 |
| ▸ | CA1 | P00915 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
| ▸ | CA3 | P07451 | 1/20 | 0.33 |
| ▸ | CA4 | P22748 | 1/20 | 0.33 |
| ▸ | CA6 | P23280 | 1/20 | 0.33 |
| ▸ | CA5A | P35218 | 1/20 | 0.33 |
| ▸ | CA7 | P43166 | 1/20 | 0.33 |
| ▸ | PLA2G7 | Q13093 | 1/20 | 0.33 |
| ▸ | CA13 | Q8N1Q1 | 1/20 | 0.33 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.33 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL5798230 | 0.90 | HTR6 (0.39) | PTGS2CA12CA2CA9HTR6 | |
| SCHEMBL4365037 | 0.89 | CA12 (0.43) | PTGS2CA12CA2CA9CA1 | |
| SCHEMBL11051151 | 0.89 | PTGS2 (0.46) | PTGS2CA12CA2CA9CA1 | |
| SCHEMBL5435788 | 0.86 | HTT (0.47) | CA2CA9CA1ALDH1A1TSHR | |
| SCHEMBL4485964 | 0.86 | PSIP1 (0.43) | PTGS2CA12CA2CA9PSIP1 | |
| SCHEMBL561475 | 0.85 | FAAH (0.39) | CA12CA2CA9HTR6CA1 | |
| Sulfuric Acid SCHEMBL5798237 | 0.85 | TSHR (0.44) | PTGS2CA12CA2CA9HTR6 | |
| SCHEMBL7102917 | 0.85 | FAAH (0.39) | CA12CA2CA9HTR6CA1 | |
| SCHEMBL5078707 | 0.85 | FAAH (0.39) | CA12CA2CA9HTR6CA1 | |
| SCHEMBL2283421 | 0.85 | FAAH (0.39) | CA12CA2CA9HTR6CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 421 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2326744-B1 | METAL COMPOSITIONS AND METHODS OF MAKING SAME | PRYOG LLC (US) | 2022-06-01 | — | — | EP | claimed |
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | claimed |
| US-8053158-B2 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-11-08 | — | — | US | claimed |
| US-20070202436-A1 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-30 | — | — | US | claimed |
| EP-1612603-A2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2006-01-04 | — | — | EP | claimed |
| US-20050277055-A1 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2005-12-15 | — | — | US | claimed |
| US-6566036-B2 | Comprising polyhydroxystyrene protected by 1-ethoxyethanol, photosensitive acid generator, solvent and polystyrene filler; dimensional and shape control of semiconductors; responsive to design rule of <0.15mu m; miniaturization | NEC ELECTRONICS CORPORATION (JP) | 2003-05-20 | — | — | US | claimed |
| US-20010009749-A1 | Chemically amplified resist | NEC CORPORATION | 2001-07-26 | — | — | US | claimed |
| US-6200480-B1 | CONTACTING IMPURE SOLUTION OF PHOTOACID GENERATING COMPOUND CONTAINING TRACE AMOUNTS OF ACIDIC IMPURITIES WITH ANIONIC ION EXCHANGE RESIN CONTAINING PENDENT POLYAMINE FUNCTIONAL GROUPS FOR SUFFICIENT AMOUNT OF TIME TO REMOVE SAID IMPURITIES | ARCH SPECIALTY CHEMICALS, INC. | 2001-03-13 | — | — | US | claimed |
| EP-1054715-A1 | METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS | Olin Microelectronic Chemicals, Inc. (US) | 2000-11-29 | — | — | EP | claimed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| WO-1999036151-A1 | METHOD OF PURIFYING PHOTOACID GENERATORS FOR USE IN PHOTORESIST COMPOSITIONS | OLIN MICROELECTRONIC CHEMICALS, INC. (US) | 1999-07-22 | — | — | WO | claimed |
| US-12570872-B2 | Acrylic polymerized polysiloxane, composition comprising the same, and cured film produced using the same | MERCK PATENT GMBH (DE) | 2026-03-10 | — | — | US | disclosed |
| US-12493243-B2 | Film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-09 | — | — | US | disclosed |
| US-12372875-B2 | Composition for resist pattern metallization process | NISSAN CHEMICAL CORPORATION (JP) | 2025-07-29 | — | — | US | disclosed |
| US-12338309-B2 | Dielectric film-forming composition | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2025-06-24 | — | — | US | disclosed |
| US-5558971-A | HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1996-09-24 | — | — | US | disclosed |
| US-5558976-A | HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 1996-09-24 | — | — | US | disclosed |
| EP-0704762-A1 | Resist material and pattern formation | WAKO PURE CHEMICAL INDUSTRIES LTD (JP) | 1996-04-03 | — | — | EP | disclosed |
| EP-0665470-A2 | Method for forming a fine pattern | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 1995-08-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12570872-B2 | Acrylic polymerized polysiloxane, composition comprising the same, and cured film produced using the same | SMC1A, SMC2, SMC3 | KEAP1 1378/4885PTGS2 1153/4885CA12 2657/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.