SCHEMBL21177757

SCHEMBL21177757

C=CCc1cc(S(=O)(=O)c2ccc(OC#N)c(CC=C)c2)ccc1OC#N

nearest known ligand 0.55

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
POLB P06746 2/20 0.55
MAPK1 P28482 3/20 0.37
TSHR P16473 2/20 0.37
PTGDR Q13258 1/20 0.36
PTGDR2 Q9Y5Y4 1/20 0.36
ALOX5 P09917 4/20 0.35
GABRA1 P14867 4/20 0.33
GABRB2 P47870 4/20 0.33
CNR2 P34972 2/20 0.33
PTPN1 P18031 2/20 0.32
MAPT P10636 1/20 0.32
ELANE P08246 1/20 0.32
FFAR4 Q5NUL3 1/20 0.32
ALDH1A1 P00352 1/20 0.31
PPARG P37231 1/20 0.31
PPARD Q03181 1/20 0.31
PPARA Q07869 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26908302 0.87 POLB (0.42) POLBMAPK1TSHRPTGDRPTGDR2
SCHEMBL5879449 0.80 POLB (0.59) POLBMAPK1TSHRALOX5GABRA1
SCHEMBL30002382 0.79 POLB (0.36) POLBMAPK1TSHRCNR2PTPN1
SCHEMBL21533300 0.79 POLB (0.36) POLBMAPK1TSHRCNR2PTPN1
SCHEMBL9618035 0.79 POLB (0.58) POLBMAPK1TSHRPTGDRPTGDR2
SCHEMBL30417022 0.78 MAPT (0.38) POLBTSHRPTGDRPTGDR2ALOX5
SCHEMBL21192542 0.77 MAPT (0.37) POLBMAPK1TSHRPTGDRPTGDR2
SCHEMBL9419416 0.77 KMT2A (0.40) MAPK1PTGDRPTGDR2ALOX5GABRA1
SCHEMBL29135911 0.77 POLB (0.59) POLBTSHRGABRA1GABRB2FFAR4
SCHEMBL8993094 0.77 GABRA1 (0.41) PTGDRPTGDR2ALOX5GABRA1GABRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111655662-B Compound, resin, composition, resist pattern forming method, circuit pattern forming method, and resin purifying method 三菱瓦斯化学株式会社 2023-09-26 CN disclosed
CN-112996839-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2021-06-18 CN disclosed
US-20210070685-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210070683-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210070727-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210047457-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-18 US disclosed
US-20210003921-A1 COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-01-07 US disclosed
EP-3760611-A1 COMPOUND, RESIN, COMPOSITION AND FILM-FORMING MATERIAL FOR LITHOGRAPHY USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-01-06 EP disclosed
EP-3747857-A1 COMPOUND, RESIN, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFYING RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-09 EP disclosed
EP-3744710-A1 COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-02 EP disclosed
CN-111788176-A Compound, resin, composition, and film-forming material for lithography using same 三菱瓦斯化学株式会社 2020-10-16 CN disclosed
CN-111655662-A Compound, resin, composition, resist pattern forming method, circuit pattern forming method, and resin purifying method 三菱瓦斯化学株式会社 2020-09-11 CN disclosed
CN-111615507-A Compound, resin, composition, and pattern forming method 三菱瓦斯化学株式会社 2020-09-01 CN disclosed
US-20200247739-A1 COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-06 US disclosed
US-20200166844-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-05-28 US disclosed
EP-3627224-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2020-03-25 EP disclosed
CN-110637256-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2019-12-31 CN disclosed
US-20190278180-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-09-12 US disclosed
EP-3517522-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2019-07-31 EP disclosed
WO-2019142897-A1 COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD 三菱瓦斯化学株式会社 2019-07-25 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210070683-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, FEM1B POLB 1908/4885MAPK1 2318/4885TSHR 4095/4885
US-20210003921-A1 COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME COL1A1, MLLT3, F12 POLB 3094/4885MAPK1 3085/4885TSHR 2642/4885
US-20210070727-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD RDX, RTN4, CROCC POLB 2343/4885MAPK1 4337/4885TSHR 4686/4885
US-20190278180-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, NBAS POLB 3928/4885MAPK1 2155/4885TSHR 2526/4885
US-20210070685-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, FEM1B POLB 1908/4885MAPK1 2318/4885TSHR 4095/4885
US-20200247739-A1 COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD CROCC, RDX, RBBP9 POLB 1096/4885MAPK1 4344/4885TSHR 4572/4885
US-20200166844-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN LIPA, LCLAT1, LCAT POLB 2760/4885MAPK1 4408/4885TSHR 4660/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.