Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 5/20 | 0.35 |
| ▸ | GABRB2 | P47870 | 5/20 | 0.35 |
| ▸ | ALOX5 | P09917 | 4/20 | 0.35 |
| ▸ | CNR2 | P34972 | 3/20 | 0.35 |
| ▸ | PTGDR | Q13258 | 1/20 | 0.35 |
| ▸ | PTGDR2 | Q9Y5Y4 | 1/20 | 0.35 |
| ▸ | MAOA | P21397 | 3/20 | 0.33 |
| ▸ | MAOB | P27338 | 3/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | PPARG | P37231 | 1/20 | 0.33 |
| ▸ | PPARD | Q03181 | 1/20 | 0.33 |
| ▸ | PPARA | Q07869 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | ELANE | P08246 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30417022 | 0.81 | MAPT (0.38) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL21192542 | 0.79 | MAPT (0.37) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL8993094 | 0.79 | GABRA1 (0.41) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL9419416 | 0.79 | KMT2A (0.40) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL29664254 | 0.76 | ELANE (0.36) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL21177757 | 0.76 | POLB (0.55) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL3420813 | 0.76 | ELANE (0.36) | GABRA1GABRB2ALOX5CNR2PTGDR | |
| SCHEMBL29135913 | 0.76 | MAOB (0.46) | GABRA1GABRB2MAOAMAOB | |
| SCHEMBL30525941 | 0.75 | ALDH1A1 (0.44) | ALDH1A1 | |
| SCHEMBL1560820 | 0.75 | ALDH1A1 (0.44) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111655662-B | Compound, resin, composition, resist pattern forming method, circuit pattern forming method, and resin purifying method | 三菱瓦斯化学株式会社 | 2023-09-26 | — | — | CN | disclosed |
| CN-112996839-A | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2021-06-18 | — | — | CN | disclosed |
| US-20210070727-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-11 | — | — | US | disclosed |
| US-20210070683-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-11 | — | — | US | disclosed |
| US-20210070685-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-11 | — | — | US | disclosed |
| US-20210047457-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-02-18 | — | — | US | disclosed |
| US-20210003921-A1 | COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-01-07 | — | — | US | disclosed |
| EP-3760611-A1 | COMPOUND, RESIN, COMPOSITION AND FILM-FORMING MATERIAL FOR LITHOGRAPHY USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-01-06 | — | — | EP | disclosed |
| EP-3747857-A1 | COMPOUND, RESIN, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFYING RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-09 | — | — | EP | disclosed |
| EP-3744710-A1 | COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-02 | — | — | EP | disclosed |
| CN-111788176-A | Compound, resin, composition, and film-forming material for lithography using same | 三菱瓦斯化学株式会社 | 2020-10-16 | — | — | CN | disclosed |
| CN-111655662-A | Compound, resin, composition, resist pattern forming method, circuit pattern forming method, and resin purifying method | 三菱瓦斯化学株式会社 | 2020-09-11 | — | — | CN | disclosed |
| CN-111615507-A | Compound, resin, composition, and pattern forming method | 三菱瓦斯化学株式会社 | 2020-09-01 | — | — | CN | disclosed |
| US-20200247739-A1 | COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-06 | — | — | US | disclosed |
| US-20200166844-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-05-28 | — | — | US | disclosed |
| EP-3627224-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2020-03-25 | — | — | EP | disclosed |
| CN-110637256-A | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2019-12-31 | — | — | CN | disclosed |
| US-20190278180-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-09-12 | — | — | US | disclosed |
| EP-3517522-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2019-07-31 | — | — | EP | disclosed |
| WO-2019142897-A1 | COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD | 三菱瓦斯化学株式会社 | 2019-07-25 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20210070683-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | RER1, RTN4, FEM1B | GABRA1 338/4885GABRB2 439/4885ALOX5 205/4885 |
| US-20210003921-A1 | COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME | COL1A1, MLLT3, F12 | GABRA1 1717/4885GABRB2 3114/4885ALOX5 1026/4885 |
| US-20210070727-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | RDX, RTN4, CROCC | GABRA1 2611/4885GABRB2 2727/4885ALOX5 430/4885 |
| US-20190278180-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | RER1, RTN4, NBAS | GABRA1 472/4885GABRB2 627/4885ALOX5 121/4885 |
| US-20210070685-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | RER1, RTN4, FEM1B | GABRA1 338/4885GABRB2 439/4885ALOX5 205/4885 |
| US-20200247739-A1 | COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD | CROCC, RDX, RBBP9 | GABRA1 3728/4885GABRB2 4339/4885ALOX5 273/4885 |
| US-20200166844-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN | LIPA, LCLAT1, LCAT | GABRA1 4843/4885GABRB2 4837/4885ALOX5 1210/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.