Known targets — ChEMBL curated mechanism
BTKCACNA1CCACNA1DCACNA1FCACNA1SCACNA2D1CACNA2D2DRD2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQHRH1HTR2AP2RY12
The experimentally established mechanism targets of Phthalimide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.64 |
| ▸ | TSHR | P16473 | 1/20 | 0.64 |
| ▸ | GSK3B | P49841 | 1/20 | 0.60 |
| ▸ | CASP3 | P42574 | 3/20 | 0.57 |
| ▸ | CASP2 | P42575 | 1/20 | 0.57 |
| ▸ | CASP7 | P55210 | 1/20 | 0.57 |
| ▸ | CASP6 | P55212 | 1/20 | 0.57 |
| ▸ | CASP8 | Q14790 | 1/20 | 0.57 |
| ▸ | POLB | P06746 | 2/20 | 0.46 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.43 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.43 |
| ▸ | MEN1 | O00255 | 2/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.43 |
| ▸ | LMNA | P02545 | 3/20 | 0.43 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.43 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.43 |
| ▸ | MAOA | P21397 | 3/20 | 0.41 |
| ▸ | MAOB | P27338 | 3/20 | 0.41 |
| ▸ | PARP1 | P09874 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phthalimide SCHEMBL30722317 | 1.00 | SMN1; SMN2 (0.64) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| Phthalimide SCHEMBL8488333 | 0.85 | TSHR (0.62) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| Phthalimide SCHEMBL217178 | 0.85 | CASP3 (0.55) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| Phthalimide SCHEMBL27968411 | 0.85 | GSK3B (0.75) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| Phthalimide SCHEMBL29217853 | 0.85 | GSK3B (0.75) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| SCHEMBL115116 | 0.84 | TSHR (0.48) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| SCHEMBL17360435 | 0.83 | SMN1; SMN2 (0.52) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| Phthalimide SCHEMBL217772 | 0.81 | GSK3B (0.68) | SMN1; SMN2GSK3BCASP3CASP2CASP7 | |
| Phthalimide SCHEMBL3220884 | 0.81 | GSK3B (0.68) | SMN1; SMN2TSHRGSK3BCASP3CASP2 | |
| Phthalimide SCHEMBL28035222 | 0.81 | GSK3B (0.68) | SMN1; SMN2TSHRGSK3BCASP3CASP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107407884-A | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming resist pattern, and method for forming circuit pattern | 三菱瓦斯化学株式会社 | 2017-11-28 | — | — | CN | disclosed |
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| EP-1813985-B1 | Antireflection film composition, substrate, and pattering process | SHINETSU CHEMICAL CO (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-1720063-B1 | Resin containing ketene-aldehyde copolymer | NIPPON SODA CO (JP) | 2010-04-07 | — | — | EP | disclosed |
| US-7687228-B2 | Antireflection film composition and patterning process using the same | SHIN ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| EP-1720063-A1 | Resin containing ketene-aldehyde copolymer | NIPPON SODA CO., LTD. (JP) | 2006-11-08 | — | — | EP | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-7105272-B2 | Acid-degradable resin compositions containing ketene-aldehyde copolymer | NIPPON SODA CO., LTD. (JP) | 2006-09-12 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050130057-A1 | Acid-degradable resin compositions containing ketene-aldehyde copolymer | NIPPON SODA CO., LTD. (JP) | 2005-06-16 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| EP-1482361-A1 | ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER | NIPPON SODA CO., LTD. (JP) | 2004-12-01 | — | — | EP | disclosed |