SCHEMBL246091

SCHEMBL246091

C=CC(=O)Oc1ccc([S+](C)C)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 4/20 0.54
RAB9A P51151 1/20 0.36
TGM2 P21980 1/20 0.36
THRA P10827 1/20 0.36
LMNA P02545 3/20 0.35
PDE6D O43924 1/20 0.35
KMT2A Q03164 5/20 0.33
MEN1 O00255 3/20 0.33
MAPT P10636 3/20 0.33
ELANE P08246 2/20 0.33
HPGD P15428 1/20 0.33
TSHR P16473 1/20 0.33
ALDH1A1 P00352 1/20 0.33
HTT P42858 1/20 0.33
HSD17B10 Q99714 1/20 0.33
KDM4E B2RXH2 1/20 0.33
TTR P02766 1/20 0.33
TP53 P04637 1/20 0.33
CYP3A4 P08684 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9487566 0.89 THRB (0.45) THRBRAB9ATGM2THRALMNA
SCHEMBL9487568 0.87 THRB (0.44) THRBRAB9ATGM2THRALMNA
Trifluoromethanesulfonic Acid SCHEMBL30925711 0.85 THRB (0.42) THRBMAPTELANEPOLBPKM
SCHEMBL2587522 0.83 THRB (0.64) THRBRAB9ATGM2THRALMNA
SCHEMBL10434604 0.79 KMT2A (0.50) RAB9ALMNAKMT2AMEN1MAPT
SCHEMBL246707 0.78 THRB (0.47) THRBRAB9ATGM2THRAPDE6D
SCHEMBL1061204 0.78 THRB (0.59) THRBTGM2LMNAMAPTALDH1A1
SCHEMBL28705673 0.78 THRB (0.59) THRBLMNAKMT2AMEN1MAPT
SCHEMBL39792 0.78 THRB (0.59) THRBTGM2LMNAKMT2AHPGD
SCHEMBL5065344 0.78 LMNA (0.59) LMNAKMT2AMEN1MAPTELANE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
JP-5043714-A None JP disclosed
US-20250004378-A1 Pattern Forming Method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-02 US disclosed
EP-4474912-A2 PATTERN FORMING METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2024-12-11 EP disclosed
EP-4474911-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-11 EP disclosed
US-20240402606-A1 Composition For Forming Resist Underlayer Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-05 US disclosed
US-20240337944-A1 Resist Underlayer Film Material, Pattern Forming Method, And Method Of Forming Resist Underlayer Film SHIN- ETSU CHEMICAL CO., LTD. (JP) 2024-10-10 US disclosed
EP-4425261-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERN FORMING METHOD, AND METHOD OF FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-04 EP disclosed
CN-118307457-A Preparation method of (4- (acryloyloxy) phenyl) dimethyl sulfonium trifluoro methanesulfonate 东南大学 2024-07-09 CN disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
EP-1780199-A1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
EP-1780198-A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
US-20060228648-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-10-12 US disclosed
EP-1710230-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-10-11 EP disclosed
JP-H0543714-A FILM SANSHIN CHEM IND CO LTD 1993-02-23 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST THRB 3341/4885RAB9A 3784/4885TGM2 2240/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 THRB 3656/4885RAB9A 385/4885TGM2 3896/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.