Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | SLC2A1 | P11166 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | CLCN2 | P51788 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2520945 | 0.90 | HTT (0.36) | HTTMCOLN3ALDH1A1LMNATSHR | |
| SCHEMBL2517298 | 0.89 | TSHR (0.35) | HTTMCOLN3ALDH1A1LMNATSHR | |
| SCHEMBL36663 | 0.89 | TSHR (0.43) | HTTMCOLN3ALDH1A1LMNATSHR | |
| SCHEMBL3969489 | 0.89 | HTT (0.32) | HTTMCOLN3ALDH1A1LMNATSHR | |
| SCHEMBL3970056 | 0.88 | HTT (0.31) | HTTMCOLN3ALDH1A1LMNATSHR | |
| SCHEMBL36503 | 0.87 | ALDH1A1 (0.39) | ALDH1A1SLC2A1 | |
| SCHEMBL703653 | 0.87 | KMT2A (0.44) | HTTMCOLN3ALDH1A1LMNATSHR | |
| SCHEMBL36281 | 0.86 | SLC2A1 (0.41) | HTTMCOLN3TSHRSLC2A1MEN1 | |
| SCHEMBL3973457 | 0.85 | FABP4 (0.39) | HTTLMNAHPGD | |
| SCHEMBL2521333 | 0.82 | ALDH1A1 (0.31) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9134611-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-09-15 | — | — | US | disclosed |
| US-8691496-B2 | Method for forming resist under layer film, pattern forming method and composition for resist under layer film | JSR CORPORATION (JP) | 2014-04-08 | — | — | US | disclosed |
| US-8663905-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2014-03-04 | — | — | US | disclosed |
| US-20140048512-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-02-20 | — | — | US | disclosed |
| US-20130004900-A1 | METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM | JSR CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-8334338-B2 | Composition for forming resist lower layer film | JSR CORPORATION (JP) | 2012-12-18 | — | — | US | disclosed |
| US-8288073-B2 | Pattern forming method | JSR CORPORATION (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20110251323-A1 | COMPOSITION FOR FORMING RESIST LOWER LAYER FILM | JSR CORPORATION | 2011-10-13 | — | — | US | disclosed |
| US-7749681-B2 | Composition for forming lower layer film and pattern forming method | JSR CORPORATION (JP) | 2010-07-06 | — | — | US | disclosed |
| US-20100081082-A1 | COMPOSITION FOR RESIST UNDER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION | JSR CORPORATION (JP) | 2010-04-01 | — | — | US | disclosed |
| EP-1641849-A1 | PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS | Symyx Technologies, Inc. (US) | 2006-04-05 | — | — | EP | disclosed |
| US-6908722-B2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-06-21 | — | — | US | disclosed |
| WO-2005003198-A1 | PHOTORESIST POLYMER COMPOSITIONS | JSR CORPORATION (JP) | 2005-01-13 | — | — | WO | disclosed |
| WO-2005000923-A1 | PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS | SYMYX TECHNOLOGIES, INC. (US) | 2005-01-06 | — | — | WO | disclosed |
| US-20040034155-A1 | Acenaphthylene derivative, polymer, and antireflection film-forming composition | JSR CORPORATION (JP) | 2004-02-19 | — | — | US | disclosed |
| EP-1386904-A1 | Acenaphthylene derivative, polymer, and antireflection film-forming composition | JSR Corporation (JP) | 2004-02-04 | — | — | EP | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030157423-A1 | Copolymer, polymer mixture, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-08-21 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | HTT 4125/4885MCOLN3 4641/4885ALDH1A1 1216/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.