SCHEMBL2521333

SCHEMBL2521333

COC(C)Oc1ccc(S2(OS(=O)(=O)C(F)(F)F)CCCC2)c2ccccc12

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3970511 0.89
SCHEMBL3971506 0.88
SCHEMBL36503 0.87 ALDH1A1 (0.39) ALDH1A1
SCHEMBL2519985 0.83 KDM4E (0.36)
SCHEMBL2521576 0.82 HTT (0.32) ALDH1A1
SCHEMBL2520945 0.81 HTT (0.36) ALDH1A1
SCHEMBL2519048 0.81
SCHEMBL703653 0.80 KMT2A (0.44) ALDH1A1
SCHEMBL36281 0.79 SLC2A1 (0.41)
SCHEMBL2517298 0.78 TSHR (0.35) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-8691496-B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film JSR CORPORATION (JP) 2014-04-08 US disclosed
US-8663905-B2 Pattern-forming method JSR CORPORATION (JP) 2014-03-04 US disclosed
US-20140048512-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-02-20 US disclosed
US-20130004900-A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM JSR CORPORATION (JP) 2013-01-03 US disclosed
US-8334338-B2 Composition for forming resist lower layer film JSR CORPORATION (JP) 2012-12-18 US disclosed
US-20110251323-A1 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM JSR CORPORATION 2011-10-13 US disclosed
US-7749681-B2 Composition for forming lower layer film and pattern forming method JSR CORPORATION (JP) 2010-07-06 US disclosed
US-20100081082-A1 COMPOSITION FOR RESIST UNDER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION JSR CORPORATION (JP) 2010-04-01 US disclosed
US-7531286-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-05-12 US disclosed
EP-1995636-A1 COMPOSITION FOR FORMING LOWER LAYER FILM AND PATTERN FORMING METHOD JSR Corporation (JP) 2008-11-26 EP disclosed
EP-1386904-B1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORP (JP) 2008-09-17 EP disclosed
US-7105269-B2 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-12 US disclosed
US-7037994-B2 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2006-05-02 US disclosed
US-6908722-B2 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-06-21 US disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
EP-1386904-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR Corporation (JP) 2004-02-04 EP disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-06-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030113658-A1 Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition ASIC1, PFAS, RARA ALDH1A1 1216/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.