SCHEMBL2603141

SCHEMBL2603141

C[S+](C)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GRIN2D O15399 4/20 0.39
GRIN3B O60391 4/20 0.39
GRIN1 Q05586 4/20 0.39
GRIN2A Q12879 4/20 0.39
GRIN2B Q13224 4/20 0.39
GRIN2C Q14957 4/20 0.39
GRIN3A Q8TCU5 4/20 0.39
LMNA P02545 2/20 0.38
SLC22A2 O15244 2/20 0.38
SLC47A1 Q96FL8 2/20 0.38
SLC22A1 O15245 1/20 0.38
TSHR P16473 1/20 0.38
NFKB1 P19838 1/20 0.38
STAT6 P42226 1/20 0.38
SIGMAR1 Q99720 1/20 0.38
POLB P06746 1/20 0.36
THRB P10828 1/20 0.36
BLM P54132 1/20 0.36
PMP22 Q01453 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL8683552 0.77
SCHEMBL12424284 0.77 GRIN2D (0.36) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL12934384 0.71 GRIN1 (0.50) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL453075 0.69 GRIN1 (0.45) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL28327525 0.69 GRIN1 (0.45) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3361 0.69 GRIN1 (0.45) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Phosphine SCHEMBL25178082 0.67 GRIN1 (0.43) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Ammonia Solution, Strong SCHEMBL6964589 0.67 GRIN1 (0.43) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Hydrochloric Acid SCHEMBL11259068 0.67 LMNA (0.47) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
Water SCHEMBL27642476 0.67 GRIN1 (0.43) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8771916-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-08 US disclosed
US-8557499-B2 Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2013-10-15 US disclosed
US-8450041-B2 Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2013-05-28 US disclosed
US-8378016-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-02-19 US disclosed
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-8232039-B2 Polymer and resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-31 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8158329-B2 Compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-17 US disclosed
US-8148044-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-03 US disclosed
US-8062829-B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-03-27 US disclosed
US-20080044738-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-02-21 US disclosed
US-7301047-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-11-27 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-7262321-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-28 US disclosed
US-20070184382-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-09 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-31 US disclosed
US-20070100159-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-05-03 US disclosed
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-05-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080044738-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same NHERF1, SLC26A3, HCN3 GRIN2D 1106/4885GRIN3B 954/4885GRIN1 289/4885
US-20070100159-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN1, HCN3, HCN2 GRIN2D 1039/4885GRIN3B 937/4885GRIN1 654/4885
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SLC26A3, HCN3, NHERF1 GRIN2D 1549/4885GRIN3B 1289/4885GRIN1 401/4885
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same KCNH3, KCNN4, NHERF1 GRIN2D 1180/4885GRIN3B 880/4885GRIN1 566/4885
US-20070122750-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same HCN3, NHERF1, HCN4 GRIN2D 1286/4885GRIN3B 1067/4885GRIN1 351/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.