Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP4F2 | P78329 | 2/20 | 0.35 |
| ▸ | CYP4A11 | Q02928 | 2/20 | 0.35 |
| ▸ | HMGCR | P04035 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18545990 | 0.85 | CYP4F2 (0.32) | CYP4F2CYP4A11 | |
| SCHEMBL17708340 | 0.82 | CYP4F2 (0.34) | CYP4F2CYP4A11HMGCR | |
| SCHEMBL28268637 | 0.80 | PRKCA (0.39) | CYP4F2CYP4A11 | |
| SCHEMBL753684 | 0.80 | CYP4F2 (0.33) | CYP4F2CYP4A11 | |
| SCHEMBL2680602 | 0.77 | CYP4F2 (0.35) | CYP4F2CYP4A11 | |
| SCHEMBL2680489 | 0.76 | CYP4F2 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL14713695 | 0.76 | DGKA (0.32) | CYP4F2CYP4A11 | |
| SCHEMBL824523 | 0.75 | CYP4F2 (0.41) | CYP4F2CYP4A11HMGCR | |
| SCHEMBL5021627 | 0.75 | CYP4F2 (0.41) | CYP4F2CYP4A11HMGCR | |
| SCHEMBL130722 | 0.75 | CYP4F2 (0.55) | CYP4F2CYP4A11 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160178816-A1 | NEAR-INFRARED-ABSORBING COMPOSITION, NEAR-INFRARED CUT FILTER OBTAINED USING SAME, PROCESS FOR PRODUCING SAID CUT FILTER, CAMERA MODULE AND PROCESS FOR PRODUCING SAME, AND SOLID PHOTOGRAPHING ELEMENT | FUJIFILM CORPORATION (JP) | 2016-06-23 | — | — | US | disclosed |
| US-20160178816-A1 | NEAR-INFRARED-ABSORBING COMPOSITION, NEAR-INFRARED CUT FILTER OBTAINED USING SAME, PROCESS FOR PRODUCING SAID CUT FILTER, CAMERA MODULE AND PROCESS FOR PRODUCING SAME, AND SOLID PHOTOGRAPHING ELEMENT | FUJIFILM CORPORATION (JP) | 2016-06-23 | — | — | US | disclosed |
| US-8088537-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20110305979-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-12-15 | — | — | US | disclosed |
| US-20090197200-A1 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-7455952-B2 | Patterning process and resist overcoat material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | CYP4F2 4248/4885CYP4A11 3663/4885HMGCR 2861/4885 |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | RER1, POLR1A, FEM1B | CYP4F2 2932/4885CYP4A11 3694/4885HMGCR 2867/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.