SCHEMBL2739883

SCHEMBL2739883

CC(=O)OCOC1CCCCC1

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 3/20 0.40
NAAA Q02083 3/20 0.37
HTT P42858 1/20 0.36
ALDH1A1 P00352 3/20 0.36
LMNA P02545 3/20 0.36
HSD17B10 Q99714 1/20 0.36
NPC1 O15118 1/20 0.35
CYP2C19 P33261 1/20 0.34
CYP19A1 P11511 1/20 0.33
NPSR1 Q6W5P4 1/20 0.32
DPP4 P27487 1/20 0.32
THRB P10828 1/20 0.32
ATM Q13315 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
APOBEC3A P31941 1/20 0.32
APOBEC3G Q9HC16 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24603593 1.00 EPHX1 (0.40) EPHX1NAAAHTTALDH1A1LMNA
SCHEMBL2739881 0.98 EPHX1 (0.37) EPHX1NAAAHTTALDH1A1LMNA
SCHEMBL14136040 0.82 NAAA (0.43) EPHX1NAAAHTTALDH1A1LMNA
SCHEMBL14878943 0.82 NAAA (0.43) EPHX1NAAAHTTALDH1A1LMNA
SCHEMBL13453027 0.82 NPC1 (0.42) EPHX1NAAAHTTALDH1A1LMNA
SCHEMBL36342 0.81 ALDH1A1 (0.43) EPHX1NAAAHTTALDH1A1NPC1
SCHEMBL14982776 0.81 ALDH1A1 (0.43) EPHX1NAAAHTTALDH1A1NPC1
SCHEMBL9197811 0.81 EPHX1 (0.33) EPHX1NAAAHTTALDH1A1CYP19A1
SCHEMBL25699258 0.80 GABRP (0.34) EPHX1ALDH1A1LMNAHSD17B10
SCHEMBL10103423 0.79 NAAA (0.49) EPHX1NAAAHTTALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-19 US disclosed
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-19 US disclosed
US-20210149301-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-20 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-28 US disclosed
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-28 US disclosed
US-9188857-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2015-11-17 US disclosed
US-20130252181-A1 RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON MITSUBISHI RAYON CO., LTD. (JP) 2013-09-26 US disclosed
US-8476401-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2013-07-02 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20080153036-A1 Chemically amplified positive resist compostion SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-06-26 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080003529-A1 (Meth)Acrylate, Polymer and Resist Composition MITSUBISHI RAYON CO., LTD. (JP) 2008-01-03 US disclosed
US-20080003529-A1 (Meth)Acrylate, Polymer and Resist Composition MITSUBISHI RAYON CO., LTD. (JP) 2008-01-03 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed
EP-0448006-B1 Process for the preparation of acylales HOECHST AG (DE) 1995-01-25 EP disclosed
EP-0448006-A2 Process for the preparation of acylales HOECHST AKTIENGESELLSCHAFT (DE) 1991-09-25 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER CHRM1, CHRM2, PKN2 EPHX1 3333/4885NAAA 4554/4885HTT 3309/4885
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process IDUA, SLC6A5, SLC6A9 EPHX1 4265/4885NAAA 602/4885HTT 3740/4885
US-20210149301-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS IDUA, SLC6A5, SLC6A9 EPHX1 4265/4885NAAA 602/4885HTT 3740/4885
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE RER1, RAD51, TERB1 EPHX1 78/4885NAAA 2662/4885HTT 3100/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.