SCHEMBL2742236

SCHEMBL2742236

C=C(C)C(=O)OCCOC(=O)C(F)(F)S(=O)(=O)O

nearest known ligand 0.47

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.47
TSHR P16473 3/20 0.42
ALDH1A1 P00352 3/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
POLB P06746 1/20 0.33
APEX1 P27695 1/20 0.33
HTT P42858 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17439214 0.94 TSHR (0.47) THRBTSHRALDH1A1L3MBTL1POLB
SCHEMBL11964329 0.94 TSHR (0.51) THRBTSHRALDH1A1L3MBTL1POLB
SCHEMBL16020887 0.93 THRB (0.41) THRBTSHRALDH1A1L3MBTL1POLB
SCHEMBL13160588 0.92 TSHR (0.54) THRBTSHRALDH1A1L3MBTL1POLB
SCHEMBL5541241 0.92 TSHR (0.54) THRBTSHRALDH1A1L3MBTL1POLB
SCHEMBL16018732 0.90 THRB (0.38) THRBTSHRALDH1A1L3MBTL1POLB
SCHEMBL13495447 0.87 THRB (0.47) THRBTSHRALDH1A1POLBAPEX1
SCHEMBL2883301 0.87 TSHR (0.38) THRBTSHRALDH1A1L3MBTL1
SCHEMBL18077350 0.86 ALDH1A1 (0.38) THRBALDH1A1L3MBTL1
SCHEMBL18499608 0.85 THRB (0.50) THRBTSHRALDH1A1POLBAPEX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 158 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230305395-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-09-28 US disclosed
US-20230161243-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-25 US disclosed
US-20230146890-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-11 US disclosed
EP-3079015-B1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHINETSU CHEMICAL CO (JP) 2020-04-29 EP disclosed
CN-106054529-B Photomask blank, resist pattern forming method, and photomask manufacturing method 信越化学工业株式会社 2020-01-17 CN disclosed
US-10509314-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-12-17 US disclosed
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10222696-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-05 US disclosed
US-10191373-B2 Method for producing polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-29 US disclosed
EP-3050932-B1 CONDUCTIVE POLYMER COMPOSITION, COATED ARTICLE, PATTERNING PROCESS, AND SUBSTRATE SHINETSU CHEMICAL CO (JP) 2018-10-31 EP disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110318693-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-16 US disclosed
US-20100183975-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND RESIN FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10509314-B2 Resist composition and patterning process SRMS, SLC11A2, PCNA THRB 2555/4885TSHR 1601/4885ALDH1A1 4490/4885
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION ZYX, CD79B, TERB1 THRB 2505/4885TSHR 1454/4885ALDH1A1 4248/4885
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X THRB 3747/4885TSHR 3175/4885ALDH1A1 4540/4885
US-20230161243-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, ASIC1, REN THRB 4147/4885TSHR 2717/4885ALDH1A1 1360/4885
US-20230146890-A1 SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, ASIC1, REN THRB 4147/4885TSHR 2717/4885ALDH1A1 1360/4885
US-10222696-B2 Resist composition and patterning process SLC11A2, GRN, PGF THRB 4449/4885TSHR 1975/4885ALDH1A1 4832/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.