Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 2/20 | 0.36 |
| ▸ | AHR | P35869 | 1/20 | 0.36 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.35 |
| ▸ | AKR1C2 | P52895 | 1/20 | 0.35 |
| ▸ | PPARG | P37231 | 4/20 | 0.35 |
| ▸ | PPARA | Q07869 | 4/20 | 0.35 |
| ▸ | PPARD | Q03181 | 2/20 | 0.35 |
| ▸ | CHRNB4 | P30926 | 2/20 | 0.35 |
| ▸ | CHRNA3 | P32297 | 2/20 | 0.35 |
| ▸ | CHRNA7 | P36544 | 2/20 | 0.35 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.35 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.35 |
| ▸ | BCHE | P06276 | 1/20 | 0.34 |
| ▸ | ACHE | P22303 | 1/20 | 0.34 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.34 |
| ▸ | HTR2C | P28335 | 1/20 | 0.33 |
| ▸ | NQO2 | P16083 | 1/20 | 0.33 |
| ▸ | TAS1R3 | Q7RTX0 | 1/20 | 0.33 |
| ▸ | TAS1R1 | Q7RTX1 | 1/20 | 0.33 |
| ▸ | RELA | Q04206 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29869460 | 1.00 | ESR1 (0.36) | ESR1AHRAKR1C3AKR1C2PPARG | |
| Ammonia Solution, Strong SCHEMBL28760276 | 0.98 | ESR1 (0.35) | ESR1AHRAKR1C3AKR1C2PPARG | |
| SCHEMBL3901021 | 0.97 | CHRNB4 (0.36) | ESR1AHRAKR1C3AKR1C2PPARG | |
| SCHEMBL134315 | 0.85 | CHRNB2 (0.42) | ESR1AHRPPARGPPARAPPARD | |
| SCHEMBL4057110 | 0.85 | LMNA (0.44) | AKR1C3AKR1C2PPARGPPARAPPARD | |
| SCHEMBL3858045 | 0.85 | ALDH1A3 (0.45) | ESR1AHRAKR1C3AKR1C2PPARG | |
| SCHEMBL409170 | 0.84 | TP53 (0.42) | CHRNA7PTGS2RELALMNA | |
| Methacrylic Acid SCHEMBL3902780 | 0.83 | ESR1 (0.38) | ESR1AKR1C3AKR1C2PPARGPPARA | |
| SCHEMBL23559184 | 0.81 | CHRNB2 (0.40) | ESR1AHRCHRNB4CHRNA3CHRNA7 | |
| SCHEMBL13845307 | 0.79 | PPARG (0.50) | PPARGPPARA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11693313-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11693313-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| CN-109843853-B | Composition and method for manufacturing device using the same | 东洋合成工业株式会社 | 2022-09-20 | — | — | CN | disclosed |
| US-11256169-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-20210405531-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-12-30 | — | — | US | disclosed |
| US-11142495-B2 | Composition and method for manufacturing device using same | TOYO GOSEI CO., LTD. (JP) | 2021-10-12 | — | — | US | disclosed |
| US-20210157234-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-05-27 | — | — | US | disclosed |
| US-20210149302-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-05-20 | — | — | US | disclosed |
| US-20210055656-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-02-25 | — | — | US | disclosed |
| US-10719014-B2 | Photoresists comprising amide component | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-07-21 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-7592125-B2 | Chemically-amplified positive photoresist compositions that contain a photoactive component and blend of at least two distinct resins; a first resin that comprises hydroxy naphthyl groups and a second cross-linked resin; reduced line edge roughness | ROHM AND HAAS ELECTRIC MATERIALS LLC (US) | 2009-09-22 | — | — | US | disclosed |
| US-7491483-B2 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-17 | — | — | US | disclosed |
| US-20080032232-A1 | Novel resins and photoresist compositions comprising same | SHIPLEY COMPANY, L.L.C. (US) | 2008-02-07 | — | — | US | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-7244542-B2 | Resins and photoresist compositions comprising same | SHIPLEY COMPANY, L.L.C. (US) | 2007-07-17 | — | — | US | disclosed |
| EP-1684120-A1 | Photresist compositions comprising resin blends | Rohm and Haas Electronic Materials LLC (US) | 2006-07-26 | — | — | EP | disclosed |
| US-20060160022-A1 | Chemically-amplified positive photoresist compositions that contain a photoactive component and blend of at least two distinct resins; a first resin that comprises carbocyclic aryl units with hetero substitution and a second cross-linked resin | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-07-20 | — | — | US | disclosed |
| US-20040038150-A1 | Novel resins and photoresist compositions comprising same | SHIPLEY COMPANY, L.L.C. | 2004-02-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11693313-B2 | Resist composition and method of forming resist pattern | C1R, C1S, C9 | ESR1 810/4885AHR 119/4885AKR1C3 123/4885 |
| US-10719014-B2 | Photoresists comprising amide component | ASPH, ALAD, SUN2 | ESR1 673/4885AHR 98/4885AKR1C3 1645/4885 |
| US-11142495-B2 | Composition and method for manufacturing device using same | LBR, LMTK2, MMS19 | ESR1 1782/4885AHR 2420/4885AKR1C3 3041/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.