SCHEMBL3064296

SCHEMBL3064296

O=C(O)c1cc(CC2CO2)c(CC2CO2)c([N+](=O)[O-])c1C(=O)O

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C19 P33261 1/20 0.33
PKM P14618 1/20 0.32
GPR35 Q9HC97 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3076191 0.90 PKM (0.32) ALDH1A1CYP1A2CYP2D6CYP2C19PKM
SCHEMBL3077250 0.87 PKM (0.35) ALDH1A1CYP1A2CYP2D6CYP2C19PKM
SCHEMBL7727731 0.82 KDM4E (0.32)
SCHEMBL1007226 0.79 LDHA (0.33)
SCHEMBL1644098 0.79
SCHEMBL3076528 0.77 HMGB1 (0.33) ALDH1A1
SCHEMBL3069660 0.77 HMGB1 (0.36) ALDH1A1GPR35
SCHEMBL6689310 0.76 HMGB1 (0.31)
SCHEMBL3076497 0.76 ALDH1A1 (0.30) ALDH1A1
SCHEMBL3074823 0.76 NOTUM (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122095316-A Composition for forming resist underlayer film 2026-05-26 CN disclosed
WO-2025095106-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION 日産化学株式会社 2025-05-08 WO disclosed
CN-114746468-B Method for producing polymer 日产化学株式会社 2024-09-13 CN disclosed
US-20230103242-A1 METHOD FOR PRODUCING POLYMER NISSAN CHEMICAL CORPORATION (JP) 2023-03-30 US disclosed
US-20230029997-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2023-02-02 US disclosed
CN-114746468-A Method for producing polymer 日产化学株式会社 2022-07-12 CN disclosed
WO-2021111977-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 日産化学株式会社 2021-06-10 WO disclosed
WO-2021111976-A1 METHOD FOR PRODUCING POLYMER 日産化学株式会社 2021-06-10 WO disclosed
US-9240327-B2 Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-01-19 US disclosed
US-20140170567-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-1757986-B1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN NISSAN CHEMICAL IND LTD (JP) 2014-05-14 EP disclosed
CN-103649835-A Resist underlayer film-forming composition for EUV lithography containing condensation polymer NISSAN CHEMICAL IND LTD 2014-03-19 CN disclosed
CN-101523292-B Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD 2013-04-10 CN disclosed
US-7790356-B2 Condensation type polymer-containing anti-reflective coating for semiconductor NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-09-07 US disclosed
CN-101523292-A Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL IND LTD (JP) 2009-09-02 CN disclosed
US-20080038678-A1 Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor NISSAN CHEMICAL INDUSTRIES LTD. (JP) 2008-02-14 US disclosed
EP-1757986-A1 ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER Nissan Chemical Industries, Ltd. (JP) 2007-02-28 EP disclosed