Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.39 |
| ▸ | IDO1 | P14902 | 1/20 | 0.38 |
| ▸ | MGLL | Q99685 | 1/20 | 0.37 |
| ▸ | NISCH | Q9Y2I1 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.36 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.36 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.36 |
| ▸ | NPC1 | O15118 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.36 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.36 |
| ▸ | RAB9A | P51151 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.36 |
| ▸ | BCL2 | P10415 | 1/20 | 0.35 |
| ▸ | RAPGEF4 | Q8WZA2 | 1/20 | 0.35 |
| ▸ | NOTUM | Q6P988 | 1/20 | 0.35 |
| ▸ | NPBWR1 | P48145 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3861937 | 0.82 | TSHR (0.42) | IDO1ALDH1A1SMN1; SMN2 | |
| SCHEMBL27608831 | 0.82 | LOXL2 (0.46) | ALDH1A1SMN1; SMN2NOS3NOS1NOS2 | |
| SCHEMBL28507332 | 0.82 | LPL (0.42) | NPC1MAPK1RAB9AL3MBTL1 | |
| SCHEMBL1223918 | 0.81 | TAAR1 (0.37) | ALDH1A1SMN1; SMN2 | |
| SCHEMBL12972144 | 0.80 | HTR2A (0.40) | ALDH1A1KDM4ECYP1A2SMN1; SMN2 | |
| SCHEMBL574627 | 0.80 | ACHE (0.32) | ALDH1A1KDM4ECYP1A2CYP2A6SMN1; SMN2 | |
| SCHEMBL1224930 | 0.78 | ENPP2 (0.45) | KDM4E | |
| SCHEMBL675673 | 0.78 | ALDH1A1 (0.46) | TP53ALDH1A1KDM4EPTGS2CYP1A2 | |
| SCHEMBL1908544 | 0.77 | CYP1A2 (0.45) | TP53IDO1MGLLNISCHALDH1A1 | |
| SCHEMBL19484773 | 0.75 | IDO1 (0.33) | IDO1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024190380-A1 | SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT MANUFACTURING METHOD, PATTERN FORMATION METHOD, AND SILICON-CONTAINING RESIN COMPOSITION PURIFIED PRODUCT | 東京応化工業株式会社 | 2024-09-19 | — | — | WO | disclosed |
| CN-117916299-A | Zirconia and titania formulations and nanocomposites for nanoimprint lithography | PT SPE塞博康有限责任公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-112142660-B | Method for simply, conveniently and efficiently synthesizing 4-aryl butyric acid derivative | 淮阴师范学院 | 2021-11-23 | — | — | CN | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9268229-B2 | Composition for forming resist underlayer film, and pattern-forming method | JSR CORPORATION (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9250526-B2 | Composition for forming resist underlayer film, and pattern-forming method | JSR CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-20150355546-A1 | COMPOSITION FOR SILICON-CONTAINING FILM FORMATION, PATTERN-FORMING METHOD, AND POLYSILOXANE COMPOUND | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| EP-2615497-A1 | RESIST PATTERN FORMING METHOD | JSR Corporation (JP) | 2013-07-17 | — | — | EP | disclosed |
| US-20130130179-A1 | POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-23 | — | — | US | disclosed |
| US-20130107235-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| WO-2013061601-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | WO | disclosed |
| US-20130101942-A1 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| EP-2579304-A1 | INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS | JSR Corporation (JP) | 2013-04-10 | — | — | EP | disclosed |
| US-20130084394-A1 | INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL | JSR CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20100233632-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD | JSR CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100178620-A1 | INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |